High-power 10-GHz operation of AlGaN HFET's on insulating SiC von Sullivan, G.J., Chen, M.Y., Higgins, J.A., Yang, J.W., Chen, Q., Pierson, R.L., McDermott, B.T.

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A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies von Zhang, S., Niu, G., Cressler, J.D., Mathew, S.J., Gogineni, U., Clark, S.D., Zampardi, P., Pierson, R.L.

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Demonstration of low-knee voltage high-breakdown GaInP double HBTs using novel compound collector design von Zampardi, P.J., Chang, C.E., Fitzsimmons, S., Pierson, R.L., McDermott, B.T., Chen, P.F., Asbeck, P.

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16 GHz low-power 1:4 prescalar fabricated in 1.0µm BiFETtechnology von Runge, K., Zampardi, P.J., Pierson, R.L., Penny, J.

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Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications von Pin-Fan Chen, Hsin, U.-M.T., Welty, R.J., Asbeck, P.M., Pierson, R.L., Zampardi, P.J., Ho, W.-J., Vincent Ho, M.C., Chang, M.F.

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High performance Al/sub 0.35/Ga/sub 0.65/As/GaAs HBT's von Welser, R.E., Pan, N., Lutz, C.R., Vu, D.P., Zampardi, P.J., Pierson, R.L., McDermott, B.T.

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High performance Al0.35Ga0.65As/GaAs HBT's von Welser, R.E, Pan, N, Lutz, C.R, Vu, D.P, Zampardi, P.J, Pierson, R.L, McDermott, B.T

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A 6-b, 4 GSa/s GaAs HBT ADC von Poulton, K., Knudsen, K.L., Corcoran, J.J., Keh-Chung Wang, Nubling, R.B., Pierson, R.L., Chang, M.-C.F., Asbeck, P.M., Huang, R.T.

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Thermal design and simulation of bipolar integrated circuits von Poulton, K., Knudesn, K.L., Corcoran, J.J., Wang, K.-C., Pierson, R.L., Nubling, R.B., Chang, M.-C.F.

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A novel optical effect in InGaP compound collector heterojunction bipolar transistors von Zampardi, P.J., Pierson, R.L.

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Heterostructure-based high-speed/high-frequency electronic circuit applications von Zampardi, P.J., Runge, K., Pierson, R.L., Higgins, J.A., Yu, R., McDermott, B.T., Pan, N.

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A packaged broad-band monolithic variable gain amplifier implemented in AlGaAs/GaAs HBT technology von Ruai Yu, Beccue, S., Zampardi, P.J., Pierson, R.L., Petersen, A., Wang, K.C., Bowers, J.E.

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InP HBTs-present status and future trends von Brar, B., Li, J.C., Pierson, R.L., Higgins, J.A.

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High-bandwidth OEIC receivers using heterojunction bipolar transistors: Design and demonstration von Pedrotti, K.D., Pierson, R.L., Sheng, N.H., Nubling, R.B., Farley, C.W., Chang, M.F.

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High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base von Wang, G.-W., Pierson, R.L., Asbeck, P.M., Wang, K.-C., Wang, N.-L., Nubling, R., Chang, M.F., Salerno, J., Sastry, S.

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AlGaAs/GaAs HBT IC's for high-speed lightwave transmission systems von Runge, K., Daniel, D., Standley, R.D., Gimlett, J.L., Nubling, R.B., Pierson, R.L., Beccue, S.M., Wang, K.-C., Sheng, N.-H., Chang, M.C.-F., Chen, D.M., Asbeck, P.M.

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A high-speed multimodulus HBT prescaler for frequency synthesizer applications von Sheng, N.-H., Pierson, R.L., Wang, K.-C., Nubling, R.B., Asbeck, P.M., Chang, M.-C.F., Edwards, W.L., Philips, D.E.

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Circuit demonstrations in a GaAs BiFET technology von Zampardi, P.J, Beccue, S.M, Yu, J, Pedrotti, K, Pierson, R.L, Ho, W.J, Chang, M.F, Wang, K.C

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Ultra-high speed p-i-n/HBT monolithic OEIC photoreceiver von Pedrotti, K.D., Pierson, R.L., Nubling, R.B., Farley, C.W., Sovero, E.A., Chang, M.F.

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A 15-GHz gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors von Wang, K.-C., Asbeck, P.M., Chang, M.-C.F., Nubling, R.B., Pierson, R.L., Sheng, N.-H., Sullivan, G.J., Yu, J., Chen, A., Clement, D., Tsen, T.C., Basit, H.F., George, J.D., Young, R.

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