Antiferromagnetic correlations in the metallic strongly correlated transition metal oxide LaNiO3 von Guo, H., Li, Z. W., Zhao, L., Hu, Z., Chang, C. F., Kuo, C.-Y., Schmidt, W., Piovano, A., Pi, T. W., Sobolev, O., Khomskii, D. I., Tjeng, L. H., Komarek, A. C.

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Growth and characterization of molecular beam epitaxy-grown Bi2Te3−xSex topological insulator alloys von Tung, Y., Chiang, Y. F., Chong, C. W., Deng, Z. X., Chen, Y. C., Huang, J. C. A., Cheng, C.-M., Pi, T.-W., Tsuei, K.-D., Li, Z., Qiu, H.

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Single-domain multiferroic BiFeO3 films von Kuo, C.-Y., Hu, Z., Yang, J. C., Liao, S.-C., Huang, Y. L., Vasudevan, R. K., Okatan, M. B., Jesse, S., Kalinin, S. V., Li, L., Liu, H. J., Lai, C.-H., Pi, T. W., Agrestini, S., Chen, K., Ohresser, P., Tanaka, A., Tjeng, L. H., Chu, Y. H.

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Structural invariance upon antiferromagnetic ordering in geometrically frustrated swedenborgite, CaBaCo2Fe2O7 von Reim, J. D., Rosén, E., Schweika, W., Meven, M., Leo, N. R., Meier, D., Fiebig, M., Schmidt, M., Kuo, C.-Y., Pi, T.-W., Hu, Z., Valldor, M.

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Incommensurate spin correlations in highly oxidized cobaltates La2−xSrxCoO4 von Li, Z. W., Drees, Y., Kuo, C. Y., Guo, H., Ricci, A., Lamago, D., Sobolev, O., Rütt, U., Gutowski, O., Pi, T. W., Piovano, A., Schmidt, W., Mogare, K., Hu, Z., Tjeng, L. H., Komarek, A. C.

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Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition von Chang, Y. H., Lin, C. A., Liu, Y. T., Chiang, T. H., Lin, H. Y., Huang, M. L., Lin, T. D., Pi, T. W., Kwo, J., Hong, M.

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The reaction of Si(001) with magnesium and calcium von Pi, T.-W., Cheng, C.-P., Wertheim, G. K.

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Electronic structures of pristine and potassium-doped rubrene thin films von Cheng, C.-P., Li, T.L., Kuo, C.-H., Pi, T.-W.

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Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template von Chong, C. W., Huang, M. J., Han, H. C., Lin, Y. K., Chiu, J. M., Huang, Y. F., Lin, H. J., Pi, T. W., Lin, J. G., Chen, L. C., Chen, K. H., Chen, Y. F.

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High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation von Pi, T.-W., Huang, M. L., Lee, W. C., Chu, L. K., Lin, T. D., Chiang, T. H., Wang, Y. C., Wu, Y. D., Hong, M., Kwo, J.

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Electronic structures of Ga2O3(Gd2O3) gate dielectric on n -Ge(001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study von Pi, T.-W., Lee, W. C., Huang, M. L., Chu, L. K., Lin, T. D., Chiang, T. H., Wang, Y. C., Wu, Y. D., Hong, M., Kwo, J.

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Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition von Pi, T.W., Lin, H.Y., Chiang, T.H., Liu, Y.T., Chang, Y.C., Lin, T.D., Wertheim, G.K., Kwo, J., Hong, M.

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k=0 magnetic structure and absence of ferroelectricity in SmFeO3 von Kuo, C-Y, Drees, Y, Fernández-Díaz, M T, Zhao, L, Vasylechko, L, Sheptyakov, D, Bell, A M T, Pi, T W, Lin, H-J, Wu, M-K, Pellegrin, E, Valvidares, S M, Li, Z W, Adler, P, Todorova, A, Küchler, R, Steppke, A, Tjeng, L H, Hu, Z, Komarek, A C

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Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-depositio... von Hong, M., Wan, H. W., Lin, K. Y., Chang, Y. C., Chen, M. H., Lin, Y. H., Lin, T. D., Pi, T. W., Kwo, J.

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Antiferromagnetic proximity effect in epitaxial CoO/NiO/MgO(001) systems von Li, Q., Liang, J. H., Luo, Y. M., Ding, Z., Gu, T., Hu, Z., Hua, C. Y., Lin, H.-J., Pi, T. W., Kang, S. P., Won, C., Wu, Y. Z.

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Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum von Lin, K.Y., Wan, H.W., Chen, K.H.M., Fanchiang, Y.T., Chen, W.S., Lin, Y.H., Cheng, Y.T., Chen, C.C., Lin, H.Y., Young, L.B., Cheng, C.P., Pi, T.W., Kwo, J., Hong, M.

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In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures von Pi, T W, Lin, Y H, Fanchiang, Y T, Chiang, T H, Wei, C H, Lin, Y C, Wertheim, G K, Kwo, J, Hong, M

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Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 × 2 from atomic layer deposition von Pi, T. W., Lin, T. D., Lin, H. Y., Chang, Y. C., Wertheim, G. K., Kwo, J., Hong, M.

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Surface photoemission from Si(100) and inelastic electron mean-free-path in silicon von Pi, T.-W, Hong, I.-H, Cheng, C.-P, Wertheim, G.K

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Correlation between magnetic properties and the electronic structures of soft magnetic ternary Fe78−xYxB22 (x = 4–9) bulk metallic glasses von Liu, M T, Ray, S C, Tsai, H M, Pao, C W, Ling, D C, Pong, W F, Chiou, J W, Tsai, M-H, Jang, L Y, Pi, T W, Lee, J F, Lin, C Y, Chin, T S

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