Investigation of eccentric PVA brush behaviors in post-Cu CMP cleaning von Sun, T., Zhuang, Y., Li, W., Philipossian, A.

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Investigating the effect of diamond size and conditioning force on chemical mechanical planarization pad topography von Sun, T., Borucki, L., Zhuang, Y., Philipossian, A.

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Effect of concentric slanted pad groove patterns on slurry flow during chemical mechanical planarization von Rosales-Yeomans, D., Lee, H., Suzuki, T., Philipossian, A.

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Characterization of copper-hydrogen peroxide film growth kinetics von DeNardis, D., Rosales-Yeomans, D., Borucki, L., Philipossian, A.

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Pad flattening ratio, coefficient of friction and removal rate analysis during silicon dioxide chemical mechanical planarization von Lee, H., Zhuang, Y., Sugiyama, M., Seike, Y., Takaoka, M., Miyachi, K., Nishiguchi, T., Kojima, H., Philipossian, A.

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Studying the effect of temperature on the copper oxidation process using hydrogen peroxide for use in multi-step chemical mechanical planarization models von DeNardis, D., Rosales-Yeomans, D., Borucki, L., Philipossian, A.

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Effect of slurry flow rate on tribological, thermal, and removal rate attributes of copper CMP von LI, Z, BORUCKI, L, KOSHIYAMA, I, PHIFIPOSSIAN, A

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Effect of retaining ring slot designs and polishing conditions on slurry flow dynamics at bow wave von Liao, X., Sampurno, Y., Zhuang, Y., Rice, A., Sudargho, F., Philipossian, A., Wargo, C.

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Tribological attributes of post-CMP brush scrubbing von PHILIPOSSIAN, A, MUSTAPHA, L

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A three-step copper chemical mechanical planarization model including the dissolution effects of a commercial slurry von DeNardis, D., Rosales-Yeomans, D., Borucki, L., Philipossian, A.

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Measurements of slurry film thickness and wafer drag during CMP von LU, J, ROGERS, C, MANNO, V. P, PHILIPOSSIAN, A, ANJUR, S, MOINPOUR, M

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Determining the Effects of Slurry Surfactant, Abrasive Size, and Abrasive Content on the Tribology and Kinetics of Copper CMP von Li, Z, Ina, K, Lefevre, P, Koshiyama, I, Philipossian, A

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Arrhenius characterization of ILD and copper CMP processes von SOROOSHIAN, J, DENARDIS, D, CHARNS, L, LI, Z, SHADMAN, F, BONING, D, HETHERINGTON, D, PHILIPOSSIAN, A

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Effect of Pad Groove Designs on the Frictional and Removal Rate Characteristics of ILD CMP von Rosales-Yeomans, D, Doi, T, Kinoshita, M, Suzuki, T, Philipossian, A

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Investigation of pad staining and its effect on removal rate in copper chemical mechanical planarization von Lee, H., Zhuang, Y., Borucki, L., Joh, S., O'Moore, F., Philipossian, A.

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Experimental and theoretical investigation of heating and convection in copper polishing von BORUCKI, L, LI, Z, PHILIPOSSIAN, A

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The Shear Force Law: A Guide to Modeling CMP Removal Rates von Borucki, L., Sampurno, Y., Philipossian, A.

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Mechanical properties of chemical mechanical polishing pads containing water-soluble particles von Charns, L., Sugiyama, M., Philipossian, A.

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Implications of Wafer-Size Scale-up on Frictional, Thermal, and Kinetic Attributes of Interlayer Dielectric CMP Process von Rosales-Yeomans, D., Borucki, L., Doi, T., Lujan, L., Philipossian, A.

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Effect of Temperature on Pad Surface Contact Area in Chemical Mechanical Planarization von Jiao, Y., Zhuang, Y., Liao, X., Borucki, L. J., Naman, A., Philipossian, A.

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