Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications von Breuer, Steffen, Pfüller, Carsten, Flissikowski, Timur, Brandt, Oliver, Grahn, Holger T, Geelhaar, Lutz, Riechert, Henning

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Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil von Calabrese, Gabriele, Corfdir, Pierre, Gao, Guanhui, Pfüller, Carsten, Trampert, Achim, Brandt, Oliver, Geelhaar, Lutz, Fernández-Garrido, Sergio

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Films of Graphene Nanomaterials Formed by Ultrasonic Spraying of Their Stable Suspensions von Modesto-López, Luis B., Miettinen, Mirella, Riikonen, Joakim, Torvela, Tiina, Pfüller, Carsten, Lehto, Vesa-Pekka, Lähde, Anna, Jokiniemi, Jorma

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Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit von Pfüller, Carsten, Brandt, Oliver, Flissikowski, Timur, Chèze, Caroline, Geelhaar, Lutz, Grahn, Holger T., Riechert, Henning

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Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene von Fernández-Garrido, Sergio, Ramsteiner, Manfred, Gao, Guanhui, Galves, Lauren A, Sharma, Bharat, Corfdir, Pierre, Calabrese, Gabriele, de Souza Schiaber, Ziani, Pfüller, Carsten, Trampert, Achim, Lopes, João Marcelo J, Brandt, Oliver, Geelhaar, Lutz

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Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1) von Sabelfeld, Karl K, Kaganer, Vladimir M, Pfüller, Carsten, Brandt, Oliver

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Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons von Brandt, Oliver, Pfüller, Carsten, Chèze, Caroline, Geelhaar, Lutz, Riechert, Henning

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Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. 108, 202101 (2016)] von Calabrese, Gabriele, Corfdir, Pierre, Gao, Guanhui, Pfüller, Carsten, Trampert, Achim, Brandt, Oliver, Geelhaar, Lutz, Fernández-Garrido, Sergio

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Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy von Dogan, Pinar, Brandt, Oliver, Pfüller, Carsten, Lähnemann, Jonas, Jahn, Uwe, Roder, Claudia, Trampert, Achim, Geelhaar, Lutz, Riechert, Henning

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Direct experimental determination of the spontaneous polarization of GaN von Lahnemann, Jonas, Brandt, Oliver, Jahn, Uwe, Pfuller, Carsten, Roder, Claudia, Dogan, Pinar, Grosse, Frank, Belabbes, Abderrezak, Bechstedt, Friedhelm, Trampert, Achim, Geelhaar, Lutz

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Quantum Dot Self-Assembly Driven by a Surfactant-Induced Morphological Instability von Lewis, Ryan B, Corfdir, Pierre, Li, Hong, Herranz, Jesús, Pfüller, Carsten, Brandt, Oliver, Geelhaar, Lutz

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Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots von Lewis, Ryan B, Trampert, Achim, Luna, Esperanza, Herranz, Jesús, Pfüller, Carsten, Geelhaar, Lutz

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Properties of GaN Nanowires Grown by Molecular Beam Epitaxy von Geelhaar, L., Chèze, C., Jenichen, B., Brandt, O., Pfüller, C., Münch, S., Rothemund, R., Reitzenstein, S., Forchel, A., Kehagias, T., Komninou, P., Dimitrakopulos, G. P., Karakostas, T., Lari, L., Chalker, P. R., Gass, M. H., Riechert, H.

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Determination of the Carrier Diffusion Length in Ga N from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities von Kaganer, Vladimir M., Lähnemann, Jonas, Pfüller, Carsten, Sabelfeld, Karl K., Kireeva, Anastasya E., Brandt, Oliver

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Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy von Sinito, C, Corfdir, P, Pfüller, C, Gao, G, Bartolomé, J, Kölling, S, Rodil Doblado, A, Jahn, U, Lähnemann, J, Auzelle, T, Zettler, J. K, Flissikowski, T, Koenraad, P, Grahn, H. T, Geelhaar, L, Fernández-Garrido, S, Brandt, O

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Carrier Diffusion in Ga N : A Cathodoluminescence Study. I. Temperature-Dependent Generation Volume von Jahn, Uwe, Kaganer, Vladimir M., Sabelfeld, Karl K., Kireeva, Anastasya E., Lähnemann, Jonas, Pfüller, Carsten, Flissikowski, Timur, Chèze, Caroline, Biermann, Klaus, Calarco, Raffaella, Brandt, Oliver

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Carrier Diffusion in Ga N : A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion von Brandt, Oliver, Kaganer, Vladimir M., Lähnemann, Jonas, Flissikowski, Timur, Pfüller, Carsten, Sabelfeld, Karl K., Kireeva, Anastasya E., Chèze, Caroline, Calarco, Raffaella, Grahn, Holger T., Jahn, Uwe

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Direct experimental determination of the spontaneous polarization of GaN von Lähnemann, Jonas, Brandt, Oliver, Jahn, Uwe, Pfüller, Carsten, Roder, Claudia, Dogan, Pinar, Grosse, Frank, Belabbes, Abderrezak, Bechstedt, Friedhelm, Trampert, Achim, Geelhaar, Lutz

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GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy von Dogan, Pinar, Brandt, Oliver, Pfüller, Carsten, Bluhm, Anne-Kathrin, Geelhaar, Lutz, Riechert, Henning

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Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) von Pfüller, Carsten, Corfdir, Pierre, Hauswald, Christian, Flissikowski, Timur, Kong, Xiang, Zettler, Johannes K., Fernández-Garrido, Sergio, Doğan, Pınar, Grahn, Holger T., Trampert, Achim, Geelhaar, Lutz, Brandt, Oliver

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