Editorial Special Issue on Dielectrics for 2-D Electronics von Lanza, Mario, Pey, Kin-Leong, Grasser, Tibor

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Analysis and Simulation of Interface Quality and Defect Induced Variability in MgO Spin-Transfer Torque Magnetic RAMs von Sikder, Bejoy, Lim, Jia Hao, Kumar, Mondol Anik, Padovani, Andrea, Haverty, Michael, Kamal, Uday, Raghavan, Nagarajan, Larcher, Luca, Pey, Kin-Leong, Baten, Md Zunaid

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Intrinsic nanofilamentation in resistive switching von Wu, Xing, Cha, Dongkyu, Bosman, Michel, Raghavan, Nagarajan, Migas, Dmitri B., Borisenko, Victor E., Zhang, Xi-Xiang, Li, Kun, Pey, Kin-Leong

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A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain von Zhu, Guojun, Zhou, Xing, Lee, Teck Seng, Ang, Lay Kee, See, Guan Huei, Lin, Shihuan, Chin, Yoke-King, Pey, Kin Leong

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Influence of Bosch Etch Process on Electrical Isolation of TSV Structures von Ranganathan, N., Da Yong Lee, Liu Youhe, Guo-Qiang Lo, Prasad, K., Pey, K. L.

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Recommended Methods to Study Resistive Switching Devices von Lanza, Mario, Wong, H.‐S. Philip, Pop, Eric, Ielmini, Daniele, Strukov, Dimitri, Regan, Brian C., Larcher, Luca, Villena, Marco A., Yang, J. Joshua, Goux, Ludovic, Belmonte, Attilio, Yang, Yuchao, Puglisi, Francesco M., Kang, Jinfeng, Magyari‐Köpe, Blanka, Yalon, Eilam, Kenyon, Anthony, Buckwell, Mark, Mehonic, Adnan, Shluger, Alexander, Li, Haitong, Hou, Tuo‐Hung, Hudec, Boris, Akinwande, Deji, Ge, Ruijing, Ambrogio, Stefano, Roldan, Juan B., Miranda, Enrique, Suñe, Jordi, Pey, Kin Leong, Wu, Xing, Raghavan, Nagarajan, Wu, Ernest, Lu, Wei D., Navarro, Gabriele, Zhang, Weidong, Wu, Huaqiang, Li, Runwei, Holleitner, Alexander, Wurstbauer, Ursula, Lemme, Max C., Liu, Ming, Long, Shibing, Liu, Qi, Lv, Hangbing, Padovani, Andrea, Pavan, Paolo, Valov, Ilia, Jing, Xu, Han, Tingting, Zhu, Kaichen, Chen, Shaochuan, Hui, Fei, Shi, Yuanyuan

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Experimental and Theoretical Investigation of Intracell Magnetic Coupling-Induced Variability of Spin-Transfer Torque Magnetic RAMs von Dutta, Ramit, Hamid, Shafin Bin, Lim, Jia Hao, Tan, Joel, Sikder, Bejoy, Raghavan, Nagarajan, Pey, Kin Leong, Baten, Md Zunaid

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Dielectric breakdown of 2D muscovite mica von Maruvada, Anirudh, Shubhakar, Kalya, Raghavan, Nagarajan, Pey, Kin Leong, O’Shea, Sean J.

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Impact of Voltage Polarity on Time-Dependent Dielectric Breakdown of 1-nm MgO-Based STT-MRAM With Self-Heating Correction von Tan, Joel, Lim, Jia Hao, Sikder, Bejoy, Baten, Md. Zunaid, Kwon, Jae Hyun, Yamane, Kazutaka, Naik, Vinayak Bharat, Raghavan, Nagarajan, Pey, Kin Leong

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Designettes: An Approach to Multidisciplinary Engineering Design Education von Telenko, Cassandra, Wood, Kristin, Otto, Kevin, Rajesh Elara, Mohan, Foong, Shaohui, Leong Pey, Kin, Tan, U-Xuan, Camburn, Bradley, Moreno, Diana, Frey, Dan

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Dielectric breakdown mechanisms in gate oxides von Lombardo, Salvatore, Stathis, James H., Linder, Barry P., Pey, Kin Leong, Palumbo, Felix, Tung, Chih Hang

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Identifying the First Layer to Fail in Dual-Layer SiOx/HfSiON Gate Dielectric Stacks von PADOVANI, Andrea, RAGHAVAN, Nagarajan, LARCHER, Luca, KIN LEONG PEY

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Schottky-Ohmic transition in metal-all-around electrical contacts to silicon nanowires von Wang, Zhong-Rui, Zhang, Gang, Pey, Kin-Leong, Tung, Chih-Hang, Lo, Guo-Qiang

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Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel von Eu Jin Tan, Kin-Leong Pey, Singh, N., Guo-Qiang Lo, Dong Zhi Chi, Yoke King Chin, Keat Mun Hoe, Guangda Cui, Pooi See Lee

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Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature von Molina, Joel, Torres, Reydezel, Ranjan, Alok, Pey, Kin-Leong

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Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiOx nMOSFETs von WENHU LIU, PADOVANI, Andrea, LARCHER, Luca, RAGHAVAN, Nagarajan, KIN LEONG PEY

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Germanium coated vertically-aligned multiwall carbon nanotubes as lithium-ion battery anodes von Susantyoko, Rahmat Agung, Wang, Xinghui, Sun, Leimeng, Pey, Kin Leong, Fitzgerald, Eugene, Zhang, Qing

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A nanoscale analysis of the leakage current in SiO2 breakdown von Zhang, Gang, Li, Xiang, Tung, Chih-Hang, Pey, Kin-Leong, Lo, Guo-Qiang

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Dielectric Breakdown in Single-Crystal Hexagonal Boron Nitride von Ranjan, Alok, Raghavan, Nagarajan, Holwill, Matthew, Watanabe, Kenji, Taniguchi, Takashi, Novoselov, Kostya S, Pey, Kin Leong, O’Shea, Sean J

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Assessment of read disturb immunity in conducting bridge memory devices – A thermodynamic perspective von Raghavan, Nagarajan, Bosman, Michel, Pey, Kin Leong

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