Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication von Heryanto, A., Putra, W.N., Trigg, A., Gao, S., Kwon, W.S., Che, F.X., Ang, X.F., Wei, J., I Made, R., Gan, C.L., Pey, K.L.

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Dielectric breakdown mechanisms in gate oxides von Lombardo, Salvatore, Stathis, James H., Linder, Barry P., Pey, Kin Leong, Palumbo, Felix, Tung, Chih Hang

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3D characterization of hard breakdown in RRAM device von Mei, S., Bosman, M., Shubhakar, K., Raghavan, N., Ming, L., Pey, K.L.

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Role of metal nanocrystals on the breakdown statistics of flash memory high-κ stacks von Feng, X., Raghavan, N., Mei, S., Du, L., Pey, K.L., Wong, H.

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New salicidation technology with Ni(Pt) alloy for MOSFETs von Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chi, D.Z., Chan, L.

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Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient von Tung, Chih Hang, Pey, Kin Leong, Tang, Lei Jun, Radhakrishnan, M. K., Lin, Wen He, Palumbo, Felix, Lombardo, Salvatore

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Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs von Tung, C.H., Pey, K.L., Lin, W.H., Radhakrishnan, M.K.

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Experimental characterization and modeling of the reliability of three-terminal dual-damascene Cu interconnect trees von Gan, C. L., Thompson, C. V., Pey, K. L., Choi, W. K.

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Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric von Ang, D.S., Pey, K.L.

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Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization von Gan, C. L., Thompson, C. V., Pey, K. L., Choi, W. K., Tay, H. L., Yu, B., Radhakrishnan, M. K.

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Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts von Jin, L.J., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z.

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Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide von Jin, L. J., Pey, K. L., Choi, W. K., Fitzgerald, E. A., Antoniadis, D. A., Pitera, A. J., Lee, M. L., Chi, D. Z., Rahman, Md A., Osipowicz, T., Tung, C. H.

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Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing von Zhao, H. B., Pey, K. L., Choi, W. K., Chattopadhyay, S., Fitzgerald, E. A., Antoniadis, D. A., Lee, P. S.

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Fundamental narrow MOSFET gate dielectric breakdown behaviors and their impacts on device performance von Chih-Hang Tung, Pey, K.-L., Tang, L.J., Cao, Y., Radhakrishnan, M.K., Lin, W.H.

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Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines von Pey, K.L., Lee, P.S., Mangelinck, D.

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Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths von Chong, Y. F., Pey, K. L., Wee, A. T. S., See, A., Chan, L., Lu, Y. F., Song, W. D., Chua, L. H.

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Effect of Ti alloying in nickel silicide formation von Setiawan, Y., Lee, P.S., Tan, C.W., Pey, K.L.

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Effects of Si(001) surface amorphization on ErSi2 thin film von TAN, E. J, KON, M. L, PEY, K. L, LEE, P. S, ZHANG, Y. W, WANG, W. D, CHI, D. Z

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Breakdowns in high-k gate stacks of nano-scale CMOS devices von Pey, K.L., Ranjan, R., Tung, C.H., Tang, L.J., Lo, V.L., Lim, K.S., Selvarajoo, T.A/L., Ang, D.S.

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Pyramidal structural defects in erbium silicide thin films von Tan, Eu Jin, Bouville, Mathieu, Chi, Dong Zhi, Pey, Kin Leong, Lee, Pooi See, Srolovitz, David J., Tung, Chih Hang

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