Super-resolution laser probing of integrated circuits using algorithmic methods von Ravikumar, V. K., Chin, Jiann Min, Lua, Winson, Linarto, Nathan, Ranganathan, Gopinath, Trisno, Jonathan, Pey, K. L., Yang, Joel K. W.

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A study of thermo-mechanical stress and its impact on through-silicon vias von Ranganathan, N, Prasad, K, Balasubramanian, N, Pey, K L

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Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy von Thamankar, R., Raghavan, N., Molina, J., Puglisi, F. M., O'Shea, S. J., Shubhakar, K., Larcher, L., Pavan, P., Padovani, A., Pey, K. L.

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Destructive dielectric breakdown of 2D muscovite mica von Maruvada, A., O'Shea, S. J., Deng, J., Shubhakar, K., Raghavan, N., Pey, K. L.

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Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime von Raghavan, N, Pey, K L, Li, X, Liu, W H, Wu, X, Bosman, M, Kauerauf, T

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Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films von Ranjan, A., Raghavan, N., O’Shea, S. J., Mei, S., Bosman, M., Shubhakar, K., Pey, K. L.

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Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric von Ranjan, A., Padovani, A., Dianat, B., Raghavan, N., Pey, K. L., O'Shea, S. J.

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The interplay between drift and electrical measurement in conduction atomic force microscopy von Ranjan, A., Pey, K. L., O’Shea, S. J.

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The development of a tapered silicon micro-micromachining process for 3D microsystems packaging von Ranganathan, N, Lee, D Y, Ebin, L, Balasubramanian, N, Prasad, K, Pey, K L

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Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication von Heryanto, A., Putra, W.N., Trigg, A., Gao, S., Kwon, W.S., Che, F.X., Ang, X.F., Wei, J., I Made, R., Gan, C.L., Pey, K.L.

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The nature of dielectric breakdown von Li, X., Tung, C. H., Pey, K. L.

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Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics von Ranjan, A., Raghavan, N., Puglisi, F. M., Mei, S., Padovani, A., Larcher, L., Shubhakar, K., Pavan, P., Bosman, M., Zhang, X. X., O'Shea, S. J., Pey, K. L.

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Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells von Wang, X., Pey, K. L., Yip, C. H., Fitzgerald, E. A., Antoniadis, D. A.

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Dopant-Segregated Schottky Silicon-Nanowire MOSFETs With Gate-All-Around Channels von Chin, Y.K., Pey, K.-L., Singh, N., Guo-Qiang Lo, Khing Hong Tan, Chio-Yin Ong, Tan, L.H.

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Multiphonon ionization of traps formed in hafnium oxide by electrical stress von Danilyuk, A. L., Migas, D. B., Danilyuk, M. A., Borisenko, V. E., Wu, X., Raghavan, N., Pey, K. L.

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Understanding Asymmetric Transportation Behavior in Graphene Field-Effect Transistors Using Scanning Kelvin Probe Microscopy von Liu, W J, Yu, H Y, Xu, S H, Zhang, Q, Zou, X, Wang, J L, Pey, K L, Wei, J, Zhu, H L, Li, M F

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Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric von Ang, D.S., Pey, K.L.

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Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels von Tan, E.J., Pey, K.L., Singh, N., Lo, G.Q., Chi, D.Z., Chin, Y.K., Tang, L.J., Lee, P.S., Ho, C.K.F.

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Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts von Jin, L.J., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z.

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New salicidation technology with Ni(Pt) alloy for MOSFETs von Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chi, D.Z., Chan, L.

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