Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies von Pokotilo, Yu. M., Petukh, A. N., Litvinov, V. V., Markevich, V. P., Abrosimov, N. V., Kamyshan, A. S., Giro, A. V., Solyanikova, K. A.

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Formation and annealing of radiation defects in tin-doped p-type germanium crystals von Litvinov, V. V., Petukh, A. N., Pokotilo, Ju. M., Markevich, V. P., Lastovskii, S. B.

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Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys von Markevich, V.P., Dobaczewski, L., Bonde Nielsen, K., Litvinov, V.V., Petukh, A.N., Pokotilo, Yu.M., Abrosimov, N.V., Peaker, A.R.

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Formation of Submicron n + -Layers in Silicon Implanted with H + -Ions von Pokotilo, Y.M., Petukh, A.N., Giro, A.V., Węgierek, P.

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Hydrogen-related shallow donors in Ge crystals implanted with protons von Pokotilo, Ju.M., Petukh, A.N., Litvinov, V.V., Markevich, V.P., Kazuchits, N.M.

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