Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density von Kuzum, D., Krishnamohan, T., Pethe, A.J., Okyay, A.K., Oshima, Y., Yun Sun, McVittie, J.P., Pianetta, P.A., McIntyre, P.C., Saraswat, K.C.

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Ge (100) and (111) N- and P-FETs With High Mobility and Low- T Mobility Characterization von Kuzum, D., Pethe, A.J., Krishnamohan, T., Saraswat, K.C.

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Ge (100) and (111) N- and P-FETs With High Mobility and Low-[Formula Omitted] Mobility Characterization von Kuzum, D, Pethe, A.J, Krishnamohan, T, Saraswat, K.C

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Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared von Okyay, A.K., Pethe, A.J., Kuzum, D., Latif, S., Miller, D.A.A., Saraswat, A.K.C.

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