LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices von di Forte Poisson, M.-A., Magis, M., Tordjman, M., Aubry, R., Sarazin, N., Peschang, M., Morvan, E., Delage, S.L., di Persio, J., Quéré, R., Grimbert, B., Hoel, V., Delos, E., Ducatteau, D., Gaquiere, C.

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LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices von Di Forte-Poisson, Marie-Antoinette, Magis, M., Tordjman, Maurice, Aubry, Raphaël, Sarazin, Nicolas, Peschang, M., Morvan, Erwan, Delage, Sylvain Laurent, Di Persio, J., Quere, R., Grimbert, B., Hoel, Virginie, Delos, E., Ducatteau, Damien, Gaquière, Christophe

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Immatriculation phosphorescente, réfléchissante, fluorescente et irradiante des plaques de police pour véhicules von PESCHANG FRANCIS-PIERRE

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Barrière protectrice escamotable pour bennes de bétonnières von PESCHANG FRANCIS-PIERRE

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Barrière protectrice escamotable pour bennes de bétonnières von PESCHANG FRANCIS-PIERRE

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Barrière protectrice escamotable pour bennes de bétonnières von PESCHANG FRANCIS-PIERRE

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Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT von Narang, Kapil, Bag, Rajesh K., Singh, Vikash K., Pandey, Akhilesh, Saini, Sachin K., Khan, Ruby, Arora, Aman, Padmavati, M.V.G., Tyagi, Renu, Singh, Rajendra

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GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application von di Forte Poisson, M.-A., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Toth, L., Pecz, B., Guziewicz, M., Thorpe, J., Aubry, R., Morvan, E., Sarazin, N., Gaquière, C., Meneghesso, G., Hoel, V., Jacquet, J.-C., Delage, S.

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In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD von di Forte Poisson, M.-A., Sarazin, N., Magis, M., Tordjman, M., Morvan, E., Aubry, R., di Persio, J., Grimbert, B.

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Epitaxial growth of aluminum nitride on AlGaN by reactive sputteringat low temperature von Duquenne, C., Djouadi, M. A., Tessier, P. Y., Jouan, P. Y., Besland, M. P., Brylinski, C., Aubry, R., Delage, S.

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III-Nitrides semiconductor compounds for microwave devices von di Forte-Poisson, M. A., Magis, M., Sarazin, N., Tordjman, M., di Persio, J.

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Growth of GaN films on PLD-deposited TaC substrates von Kirchner, K.W., Derenge, M.A., Zheleva, T.S., Vispute, R.D., Jones, K.A.

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Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT von Soltani, A., BenMoussa, A., Touati, S., Hoël, V., De Jaeger, J.-C., Laureyns, J., Cordier, Y., Marhic, C., Djouadi, M.A., Dua, C.

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The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates von Caban, Piotr, Kosciewicz, Kinga, Strupinski, Wlodek, Wojcik, Marek, Gaca, Jaroslaw, Szmidt, Jan, Ozturk, Mustafa, Ozbay, Ekmel

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