Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor von Zhu, Zhongyunshen, Persson, Anton E. O., Wernersson, Lars-Erik

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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization von Persson, Anton E. O., Athle, Robin, Littow, Pontus, Persson, Karl-Magnus, Svensson, Johannes, Borg, Mattias, Wernersson, Lars-Erik

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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2 von Athle, Robin, Persson, Anton E. O., Irish, Austin, Menon, Heera, Timm, Rainer, Borg, Mattias

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Multidimensional Hybridization of Dark Surface Plasmons von Yankovich, Andrew B, Verre, Ruggero, Olsén, Erik, Persson, Anton E. O, Trinh, Viet, Dovner, Gudrun, Käll, Mikael, Olsson, Eva

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As-deposited ferroelectric HZO on a III–V semiconductor von Andersen, André, Persson, Anton E. O., Wernersson, Lars-Erik

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RF Characterization of Ferroelectric MOS Capacitors von Persson, Anton E. O., Andric, Stefan, Fhager, Lars, Wernersson, Lars-Erik

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A method for estimating defects in ferroelectric thin film MOSCAPs von Persson, Anton E. O., Athle, Robin, Svensson, Johannes, Borg, Mattias, Wernersson, Lars-Erik

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Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing von Athle, Robin, Blom, Theodor, Irish, Austin, Persson, Anton E. O., Wernersson, Lars‐Erik, Timm, Rainer, Borg, Mattias

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Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2 von Athle, Robin, Persson, Anton E.O., Troian, Andrea, Borg, Mattias

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Ferroelectric-Antiferroelectric Transition of Hf 1- x Zr x O 2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf 0.2 Zr 0.8 O 2 von Dahlberg, Hannes, Persson, Anton E O, Athle, Robin, Wernersson, Lars-Erik

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Ferroelectric-Antiferroelectric Transition of Hf1–x Zr x O2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2 von Dahlberg, Hannes, Persson, Anton E. O., Athle, Robin, Wernersson, Lars-Erik

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On the dynamics in chemical vapor deposition of InN von Hsu, Chih-Wei, Deminskyi, Petro, Persson, Anton, Karlsson, Matts, Pedersen, Henrik

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Integration of Ferroelectric Hf x Zr 1-x O 2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon von Persson, Anton E. O., Zhu, Zhongyunshen, Athle, Robin, Wernersson, Lars-Erik

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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1–x Zr x O2 von Athle, Robin, Persson, Anton E. O, Irish, Austin, Menon, Heera, Timm, Rainer, Borg, Mattias

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Ferroelectric-Antiferroelectric Transition of Hf1- xZrxO2on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2 von Dahlberg, Hannes, Persson, Anton E.O., Athle, Robin, Wernersson, Lars Erik

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Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform von Persson, Anton E. O.

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Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf 1– x Zr x O 2 von Athle, Robin, Persson, Anton E.O, Troian, Andrea, Borg, Mattias

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Ferroelectric-Antiferroelectric Transition of Hf1–xZrxO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2 von Dahlberg, Hannes, Persson, Anton E. O., Athle, Robin, Wernersson, Lars-Erik

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SpecPCM: A Low-power PCM-based In-Memory Computing Accelerator for Full-stack Mass Spectrometry Analysis von Fan, Keming, Moradifirouzabadi, Ashkan, Wu, Xiangjin, Li, Zheyu, Ponzina, Flavio, Persson, Anton, Pop, Eric, Rosing, Tajana, Kang, Mingu

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Improved Endurance of Ferroelectric Hf x Zr 1–x O 2 Integrated on InAs Using Millisecond Annealing (Adv. Mater. Interfaces 27/2022) von Athle, Robin, Blom, Theodor, Irish, Austin, Persson, Anton E. O., Wernersson, Lars‐Erik, Timm, Rainer, Borg, Mattias

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