Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment von Zebrev, G.I., Pavlov, D.Y., Pershenkov, V.S., Nikiforov, A.Y., Sogoyan, A.V., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.

Volltext

True dose rate physical mechanism of ELDRS effect in bipolar devices von Pershenkov, V.S., Petrov, A.S., Bakerenkov, A.S., Ulimov, V.N., Felytsyn, V.A., Rodin, A.S., Belyakov, V.V., Telets, V.A., Shurenkov, V.V.

Volltext

Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator von Bakerenkov, A.S., Belyakov, V.V., Kozyukov, A.E., Pershenkov, V.S., Solomatin, A.V., Shurenkov, V.V.

Volltext

ELDRS in SiGe transistors for room and low-temperature irradiation von Pershenkov, V.S., Bakerenkov, A.S., Felitsyn, V.A., Rodin, A.S., Telets, V.A., Belyakov, V.V.

Volltext

Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors von Pershenkov, V.S., Bashin, A.Y., Zebrev, G.I., Avdeev, S.V., Belyakov, V.V., Ulimov, V.N., Emelianov, V.V.

Volltext

Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses von Pershenkov, V.S., Ullán, M., Wilder, M., Spieler, H., Spencer, E., Rescia, S., Newcomer, F.M., Martinez-McKinney, F., Kononenko, W., Grillo, A.A., Díez, S.

Volltext

Effect of aging on radiation response of bipolar transistors von Pershenkov, V.S., Slesarev, A.Y., Sogoyan, A.V., Belyakov, V.V., Kekukh, V.B., Bashin, A.Y., Ivashin, D.V., Motchkine, V.S., Ulimov, V.N., Emelianov, V.V.

Volltext

Mechanism of the Saturation of the Radiation Induced Interface Trap Buildup von Bakerenkov, A.S., Shurenkov, V.V., Pershenkov, V.S., Belyakov, V.V., Solomatin, A.V.

Volltext

Radiation Degradation Modeling of Bipolar Operational Amplifier Input Offset Voltage in LTSpice IV von Shurenkov, V.V., Bakerenkov, A.S., Pershenkov, V.S., Solomatin, A.V., Belyakov, V.V.

Volltext

Effect of Radiation Induced Charge Neutralization on ELDRS von Shurenkov, V.V., Bakerenkov, A.S., Belyakov, V.V., Yastrebov, A.T., Pershenkov, V.S., Solomatin, A.V.

Volltext

Using Low Temperature Irradiation for ELDRS Estimation von Shurenkov, V.V., Bakerenkov, A.S., Belyakov, V.V., Yastrebov, A.T., Pershenkov, V.S., Solomatin, A.V.

Volltext

X-ray ion mobility spectrometer von Pershenkov, V.S., Tremasov, A.D., Belyakov, V.V., Razvalyaev, A.U., Mochkin, V.S.

Volltext

The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices von Pershenkov, V.S., Maslov, V.B., Cherepko, S.V., Shvetzov-Shilovsky, I.N., Belyakov, V.V., Sogoyan, A.V., Rusanovsky, V.I., Ulimov, V.N., Emelianov, V.V., Nasibullin, V.S.

Volltext

IC’s radiation effects modeling and estimation von Belyakov, V.V, Chumakov, A.I, Nikiforov, A.Y, Pershenkov, V.S, Skorobogatov, P.K, Sogoyan, A.V

Volltext

Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors von Belyakov, V.V., Pershenkov, V.S., Shalnov, A.V., Shvetzov-Shilovsky, I.N.

Volltext

X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages von Levin, M.N, Gitlin, V.R, Kadmensky, S.G, Ostrouhov, S.S, Pershenkov, V.S

Volltext

Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response von Pershenkov, V.S., Avdeev, S.V., Tsimbalov, A.S., Levin, M.N., Belyakov, V.V., Ivashin, D.V., Slesarev, A.Y., Bashin, A.Y., Zebrev, G.I., Ulimov, V.N., Emelianov, V.V.

Volltext

Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices von Emelianov, V.V., Sogoyan, A.V., Meshurov, O.V., Ulimov, V.N., Pershenkov, V.S.

Volltext

Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures von Pershenkov, V.S., Cherepko, S.V., Sogoyan, A.V., Belyakov, V.V., Ulimov, V.N., Abramov, V.V., Shalnov, A.V., Rusanovsky, V.I.

Volltext

Investigation of MOSFET operation in bipolar mode von Pershenkov, V.S., Belyakov, V.V., Cherepko, S.V., Shvetzov-Shilovsky, I.N., Abramov, V.V.

Volltext