Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses von Pershenkov, V.S., Ullán, M., Wilder, M., Spieler, H., Spencer, E., Rescia, S., Newcomer, F.M., Martinez-McKinney, F., Kononenko, W., Grillo, A.A., Díez, S.

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Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator von Bakerenkov, A.S., Belyakov, V.V., Kozyukov, A.E., Pershenkov, V.S., Solomatin, A.V., Shurenkov, V.V.

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Radiation hardness estimation in various temperature conditions under radiation impact von Bakerenkov, A S, Rodin, A S, Felitsyn, V A, Pershenkov, V S

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Conversion model of radiation-induced interface-trap buildup and the some examples of its application von Pershenkov, V S, Sogoyan, A V, Telets, V A

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1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies" von Pershenkov, V S, Zebrev, G I

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Exhaled Breath Analysis in Diagnostics of Cardiovascular Diseases von Bykova, A A, Malinovskaya, L K, Chomakhidze, P Sh, Trushina, O V, Shaltaeva, Y R, Belyakov, V V, Golovin, A V, Pershenkov, V S, Syrkin, A L, Betelin, V B, Kopylov, Ph Yu

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ELDRS in a wide range of total doses von Pershenkov, V S, Savchenkov, D V, Telets, V A

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Low temperature radiation response of SiGe HBTs von Bakerenkov, A S, Felitsyn, V A, Rodin, A S, Bursian, Yu D, Pershenkov, V S

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Mechanism of the Saturation of the Radiation Induced Interface Trap Buildup von Pershenkov, V.S., Belyakov, V.V., Solomatin, A.V., Shurenkov, V.V., Bakerenkov, A.S.

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Radiation Degradation Modeling of Bipolar Operational Amplifier Input Offset Voltage in LTSpice IV von Pershenkov, V.S., Solomatin, A.V., Bakerenkov, A.S., Belyakov, V.V., Shurenkov, V.V.

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The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices von Pershenkov, V.S., Maslov, V.B., Cherepko, S.V., Shvetzov-Shilovsky, I.N., Belyakov, V.V., Sogoyan, A.V., Rusanovsky, V.I., Ulimov, V.N., Emelianov, V.V., Nasibullin, V.S.

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Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment von Zebrev, G.I., Pavlov, D.Y., Pershenkov, V.S., Nikiforov, A.Y., Sogoyan, A.V., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.

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Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors von Pershenkov, V.S., Bashin, A.Y., Zebrev, G.I., Avdeev, S.V., Belyakov, V.V., Ulimov, V.N., Emelianov, V.V.

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Effect of aging on radiation response of bipolar transistors von Pershenkov, V.S., Slesarev, A.Y., Sogoyan, A.V., Belyakov, V.V., Kekukh, V.B., Bashin, A.Y., Ivashin, D.V., Motchkine, V.S., Ulimov, V.N., Emelianov, V.V.

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IC’s radiation effects modeling and estimation von Belyakov, V.V, Chumakov, A.I, Nikiforov, A.Y, Pershenkov, V.S, Skorobogatov, P.K, Sogoyan, A.V

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Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors von Belyakov, V.V., Pershenkov, V.S., Shalnov, A.V., Shvetzov-Shilovsky, I.N.

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X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages von Levin, M.N, Gitlin, V.R, Kadmensky, S.G, Ostrouhov, S.S, Pershenkov, V.S

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Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures von Pershenkov, V.S., Belyakov, V.V., Shalnov, A.V.

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Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response von Pershenkov, V.S., Avdeev, S.V., Tsimbalov, A.S., Levin, M.N., Belyakov, V.V., Ivashin, D.V., Slesarev, A.Y., Bashin, A.Y., Zebrev, G.I., Ulimov, V.N., Emelianov, V.V.

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Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices von Emelianov, V.V., Sogoyan, A.V., Meshurov, O.V., Ulimov, V.N., Pershenkov, V.S.

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