Innovative method to study irradiation damage in silicon pixel detectors for HEP: TLM von Saleem-Rashid, T., Lounis, A., Perrossier, J.L., Hohov, D., Coudevylle, J.R., Villebasse, C., Isac, N.

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Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys von Hattab, A, Perrossier, J.L, Meyer, F, Barthula, M, Osten, H.J, Griesche, J

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Electrical properties of 1.55 µm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime von Mangeney, J., Joulaud, L., Decobert, J., Lourtioz, J.-M., Perrossier, J.L., Cabaret, S., Crozat, P.

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What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds? von Aubry-Fortuna, V., Perrossier, J.-L., Mamor, M., Meyer, F., Frojdh, C., Thungstrom, G., Petersson, C.S., Bodnar, S., Regolini, J.L.

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Long-term stability of InP MIS devices von Tardy, J., Thomas, I., Viktorovitch, P., Gendry, M., Perrossier, J.L., Santinelli, C., Besland, M.P., Louis, P., Post, G.

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Characterization of high temperature annealing of InP by scanning photoluminescence and capacitance-voltage measurements of metal/insulator/semiconductor devices von Tardy, J., Perrossier, J.L., Krafft, F., Krawczyk, S.K., Thomas, I., Barbier, D.

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Fermi-level pinning in Schottky diodes on IV–IV semiconductors: effect of Ge and C incorporation von Mamor, M, Perrossier, J.-L, Aubry-Fortuna, V, Meyer, F, Bouchier, D, Bodnar, S, Regolini, J.L

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