On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells von Mazurier, J., Weber, O., Andrieu, F., Toffoli, A., Rozeau, O., Poiroux, T., Allain, F., Perreau, P., Fenouillet-Beranger, C., Thomas, O., Belleville, M., Faynot, O.

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Highly transparent piezoelectric PZT membranes for transducer applications von Pavageau, Franklin, Dieppedale, Christel, Perreau, Pierre, Liechti, Romain, Hamelin, Antoine, Licitra, Christophe, Casset, Fabrice, Le Rhun, Gwenaël

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Highly transparent PZT capacitors on glass obtained by layer transfer process von Le Rhun, Gwenael, Pavageau, Franklin, Wagué, Baba, Perreau, Pierre, Licitra, Christophe, Frey, Laurent, Dieppedale, Christel

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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues von VILLALON, Anthony, LE ROYER, Cyrille, SCHEIBLIN, Pascal, ALLAIN, Fabienne, ANDRIEU, François, WEBER, Olivier, FAYNOT, Olivier, CRISTOLOVEANU, Sorin, CASSE, Mickael, COOPER, David, MAZURIER, Jérome, PREVITALI, Bernard, TABONE, Claude, PERREAU, Pierre, HARTMANN, Jean-Michel

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Experimental investigation of ESD design window for fully depleted SOI N-MOSFETs von Benoist, Thomas, Fenouillet-Beranger, Claire, Perreau, Pierre, Buj, Christel, Galy, Philippe, Marin-Cudraz, David, Faynot, Olivier, Cristoloveanu, Sorin, Gentil, Pierre

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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: V Tuning, Variability, Access Resistance, and Mobility Issues von Villalon, Anthony, Le Royer, Cyrille, Cristoloveanu, Sorin, Cassé, Mickaël, Cooper, David, Mazurier, Jaome, Previtali, Bernard, Tabone, Claude, Perreau, Pierre, Hartmann, Jean-Michel, Scheiblin, Pascal, Allain, Fabienne, Andrieu, Francois, Weber, Olivier, Faynot, Olivier

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Fully Depleted Strained Silicon-on-Insulator p-MOSFETs With Recessed and Embedded Silicon-Germanium Source/Drain von Baudot, S, Andrieu, F, Weber, O, Perreau, P, Damlencourt, J, Barnola, S, Salvetat, T, Tosti, L, Brevard, L, Lafond, D, Eymery, J, Faynot, O

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Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances von Ben Akkez, Imed, Fenouillet-Beranger, Claire, Cros, Antoine, Perreau, Pierre, Haendler, Sébatien, Weber, Olivier, Andrieu, François, Pellissier-Tanon, D., Abbate, F., Richard, C., Beneyton, R., Gouraud, P., Margain, A., Borowiak, C., Gourvest, E., Bourdelle, K.K., Nguyen, B.Y., Poiroux, T., Skotnicki, Thomas, Faynot, Olivier, Balestra, Francis, Ghibaudo, Gérard, Boeuf, Fréderic

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On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells : CHARACTERIZATION OF NANO CMOS VARIABIALITY BY SIMULATION AND MEASUREMENTS von MAZURIER, Jérôme, WEBER, Olivier, BELLEVILLE, Marc, FAYNOT, Olivier, ANDRIEU, François, TOFFOLI, Alain, ROZEAU, Olivier, POIROUX, Thierry, ALLAIN, Fabienne, PERREAU, Pierre, FENOUILLET-BERANGER, Claire, THOMAS, Olivier

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METHOD FOR MANUFACTURING A COMPONENT COMPRISING A LAYER OF MONOCRYSTALLINE MATERIAL COMPATIBLE WITH HIGH THERMAL BUDGETS von BOUSQUET, Marie, REINHARDT, Alexandre, PERREAU, Pierre

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(Invited) Lithium-Based Components Integrated on Silicon: Disruptive, Promising and Credible Solutions for 5G & Beyond von Lamy, Yann, Dupont, Florian, Rodriguez, Guillaume, Bedjaoui, Messaoud, Perreau, Pierre, Bousquet, Marie, Reinhardt, Alexandre, Oukassi, Sami

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La guerre économique dans nos colonies von Perreau Pradier, Pierre, 1885

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PROCESS FOR FABRICATING A COMPONENT COMPRISING A LAYER MADE OF SINGLE-CRYSTAL MATERIAL COMPATIBLE WITH HIGH THERMAL BUDGETS von BOUSQUET, Marie, REINHARDT, Alexandre, PERREAU, Pierre

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High Scalability and Low Variability of Planar Fully Depleted SOI MOSFETs von Weber, Olivier, Andrieu, Francois, Fenouillet-Béranger, Claire, Buj-Dufournet, Christel, Barral, Vincent, Perreau, Pierre, Tosti, Lucie, Brevard, Laurent, Faynot, Olivier

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ESD robustness of FDSOI gated diode for ESD network design: Thin or thick BOX? von Benoist, Thomas, Fenouillet-Beranger, Claire, Perreau, Pierre, Buj, Christel, Galy, Philippe, Marin-Cudraz, David, Faynot, Olivier, Cristoloveanu, Sorin, Gentil, Pierre

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Ultra Compact FDSOI Transistors including Strain and Orientation: Processing and Performance von Fenouillet-Beranger, Claire, Pham Nguyen, Loan, Perreau, Pierre, Denorme, Stephane, Andrieu, Francois, Faynot, Olivier, Tosti, Lucie, Brevard, Laurent, Buj, Christel, Weber, Olivier, Gallon, Claire, Fiori, V., Boeuf, Frederic, Cristoloveanu, S., Skotnicki, Thomas

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FDSOI Floating Body Cell eDRAM Using Gate-Induced Drain-Leakage (GIDL) Write Current for High Speed and Low Power Applications von Puget, Sophie, Bossu, Germain, Fenouiller-Beranger, Claire, Perreau, Pierre, Masson, Pascal, Mazoyer, Pascale, Lorenzini, Philippe, Portal, Jean-Michel, Bouchakour, Rachid, Skotnicki, Thomas

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La brucellose bovine au Tchad von Perreau, Pierre

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CIRCUIT INTEGRE COMPORTANT DES TRANSISTORS PMOS A TENSIONS DE SEUIL DISTINCTES von DEGORS NICOLAS, PERREAU PIERRE, ANDRIEU FRANCOIS

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Procédé de scellement eutectique de deux substrats von BERTHELOT, Audrey, FOURNEL, Frank, PERREAU, Pierre, ENYEDI, Grégory

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