Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs von KOPF, R. F, HERMAN, M. H, LAMONT SCHNOES, M, PERLEY, A. P, LIVESCU, G, OHRING, M

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Ion milling damage in InP and GaAs von PEARTON, S. J, CHAKRABARTI, U. K, PERLEY, A. P, JONES, K. S

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Characteristics of III-V dry etching in HBr-based discharges von PEARTON, S. J, CHAKRABARTI, U. K, LANE, E, PERLEY, A. P, ABERNATHY, C. R, HOBSON, W. S, JONES, K. S

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Degradation-free electron cyclotron resonance plasma etching of InP von Pearton, S J, Chakrabarti, U K, Perley, A P, Constantine, C, Johnson, D

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Cl2 and SiCl4 reactive ion etching of In-based III-V semiconductors von PEARTON, S. J, CHAKRABARTI, U. K, HOBSON, W. S, PERLEY, A. P

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Hydrogen iodide-based dry etching of GaAs, InP, and related compounds von PEARTON, S. J, CHAKRABARTI, U. K, HOBSON, W. S, ABERNATHY, C. R, KATZ, A, REN, F, FULLOWAN, T. R, PERLEY, A. P

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Ion implantation doping and isolation of In0.5Ga0.5P von PEARTON, S. J, KUO, J. M, REN, F, KATZ, A, PERLEY, A. P

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Dry etching characteristics of III-V semiconductors in microwave BCl3 discharges von PEARTON, S. J, HOBSON, W. S, ABERNATHY, C. R, REN, F, FULLOWAN, T. R, KATZ, A, PERLEY, A. P

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Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+ and Be+ ion implantation von HAILEMARIAM, E, PEARTON, S. J, HOBSON, W. S, LUFTMAN, H. S, PERLEY, A. P

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Dry etching of GaAs, AlGaAs, an GaSb using electron cyclotron resonance and radio frequency CH4/H2/Ar or C2H6/H2/Ar discharges von PEARTON, S. J, CHAKRABARTI, U. K, PEARTON, S. J, PERLEY, A. P, HOBSON, W. S, GEVA, M

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Use of CF3Br/Ar discharges for reactive ion etching of III-V semiconductors von PEARTON, S. J, HOBSON, W. S, GEVA, M, CHARKRABARTI, U. K, LANE, E, PERLEY, A. P

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Electron effective mass and band-gap dependence on alloy composition of Al y Ga x In1− y − x As, lattice matched to InP von Kopf, R. F., Wei, H. P., Perley, A. P., Livescu, G.

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Electron effective mass and band-gap dependence on alloy composition of AlyGaxIn1-yAs, lattice matched to InP von KOPF, R. F, WEI, H. P, PERLEY, A. P, LIVESCU, G

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Dry Etching of GaAs , AlGaAs , and GaSb Using Electron Cyclotron Resonance and Radio Frequency  CH 4 /  H 2 / Ar or  C 2 H 6 /  H 2 / Ar Discharges... von Pearton, S. J., Chakrabarti, U. K., Perley, A. P., Hobson, W. S., Geva, M.

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Ion implantation doping and isolation of In sub(0.5)Ga sub(0.5)P von Pearton, S J, Kuo, J M, Ren, F, Katz, A, Perley, A P

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Hybrid electron cyclotron resonance-radio-frequency plasma etching of III?V semiconductors in Cl2-based discharges. Part I: GaAs and related compounds von Pearton, S. J., Chakrabarti, U. K., Katz, A., Perley, A. P., Hobson, W. S., Geva, M.

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Use of CF3,Br/Al, discharges for reactive ion etching of III-V semiconductors von Pearton, S. J., Hobson, W. S., Geva, M., Charkrabarti, U. K., Lane, E., Perley, A. P.

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Hybrid electron cyclotron resonance-radio-frequency plasma etching of III?V semiconductors in Cl2-based discharges. Part II: InP and related compounds von Pearton, S. J., Hobson, W. S., Chakrabarti, U. K., Katz, A., Perley, A. P.

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Dry etching characteristics of III-V semiconductors in microwave BCl sub(3) discharges von Pearton, S J, Hobson, W S, Abernathy, C R, Ren, F, Fullowan, T R, Katz, A, Perley, A P

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Hybrid electron cyclotron resonance-radio-frequency plasma etching of III-V semiconductors in Cl2-based discharges. I : GaAs and related compounds von PEARTON, S. J, CHAKRABARTI, U. K, KATZ, A, PERLEY, A. P, HOBSON, W. S, GEVA, M

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