Low-Frequency Noise Investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation von Takakura, K., Putcha, V., Simoen, E., Alian, A. R., Peralagu, U., Waldron, N., Parvais, B., Collaert, N.

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Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors von Takakura, K, Putcha, V, Simoen, E, Alian, A R, Peralagu, U, Waldron, N, Parvais, B, Collaert, N

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Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs von ElKashlan, R. Y., Rodriguez, R., Yadav, S., Khaled, A., Peralagu, U., Alian, A., Waldron, N., Zhao, M., Wambacq, P., Parvais, B., Collaert, N.

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Critical current diffraction pattern of SIFS Josephson junctions with a step-like F-layer von Weides, M, Peralagu, U, Kohlstedt, H, Pfeiffer, J, Kemmler, M, Gürlich, C, Goldobin, E, Koelle, D, Kleiner, R

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Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C von Agopian, P.G.D., Carmo, G.J., Martino, J.A., Simoen, E., Peralagu, U., Parvais, B., Waldron, N., Collaert, N.

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(Plenary) The Revival of Compound Semiconductors and How They Will Change the World in a 5G/6G Era von Collaert, Nadine, Alian, AliReza, Banerjee, Aritra, Chauhan, Vikas, ElKashlan, Rana Y., Hsu, Brent, Ingels, Mark, Khaled, Ahmad, Kodandarama, Komal Vondkar, Kunert, Bernardette, Mols, Yves, Peralagu, Uthayasankaran, Putcha, Vamsi, Rodriguez, Raul, Sibaja-Hernandez, Arturo, Simoen, Eddy, Vais, Abhitosh, Walke, Amey, Witters, Liesbeth, Yadav, Sachin, Yu, Hao, Zhao, Ming, Wambacq, Piet, Parvais, Bertrand, Waldron, Niamh

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(Invited) Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options von Peralagu, Uthayasankaran, Li, Xu, Ignatova, Olesya, Fu, Yen-Chun, Millar, David Alan John, Steer, Matthew J, Povey, Ian M, Hossain, Khalid, Jain, Manish, Golding, Terry G, Droopad, Ravi, Hurley, P. K., Thayne, Iain G

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Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs von Abhinay, S, Wu, W.-M, Shih, C.-A, Chen, S.-H, Sibaja-Hernandez, A, Parvais, B, Peralagu, U, Alian, A, Wu, T.-L, Ker, M.-D, Groeseneken, G, Collaert, N

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Critical current diffraction pattern of SIFS Josephson junctions with step-like F-layer von Weides, M, Peralagu, U, Kohlstedt, H, Pfeiffer, J, Kemmler, M, Gürlich, C, Goldobin, E, Koelle, D, Kleiner, R

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