Physics and applications of GexSi1-x/Si strained-layer heterostructures von People, R.

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Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures von PEOPLE, R, BEAN, J. C

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Simulation and characterization of the selective area growth process von Alam, M. A., People, R., Isaacs, E., Kim, C. Y., Evans-Lutterodt, K., Siegrist, T., Pernell, T. L., Vandenberg, J., Sputz, S. K., Chu, S. N. G., Lang, D. V., Smith, L., Hybertsen, M. S.

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Synchrotron x-ray microdiffraction diagnostics of multilayer optoelectronic devices von Cai, Z.-H., Rodrigues, W., Ilinski, P., Legnini, D., Lai, B., Yun, W., Isaacs, E. D., Lutterodt, K. E., Grenko, J., Glew, R., Sputz, S., Vandenberg, J., People, R., Alam, M. A., Hybertsen, M., Ketelsen, L. J. P.

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Grey FNN control and robustness design for practical nonlinear systems von Chen, Zhiyong, Chen, Timothy, Meng, Yahui, Wang, Ruei-yuan

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ECOLOGICAL AND HUMAN HEALTH RISKS ASSOCIATED WITH SOIL POLLUTION BY PAHS AND HEAVY METALS IN THE NIGER DELTA von IHENETU, Stanley Chukwuemeka

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Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input von Johnson, J.E., Ketelsen, L.J.-P., Grenko, J.A., Sputz, S.K., Vandenberg, J., Focht, M.W., Stampone, D.V., Peticolas, L.J., Smith, L.E., Glogovsky, K.G., Przybylek, G.J., Chu, S.N.G., Lentz, J.L., Tzafaras, N.N., Luther, L.C., Pernell, T.L., Walters, F.S., Romero, D.M., Freund, J.M., Reynolds, C.L., Gruezke, L.A., People, R., Alam, M.A.

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Measurement of the band gap of GexSi1-x/Si strained-layer heterostructures von LANG, D. V, PEOPLE, R, BEAN, J. C, SERGENT, A. M

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Band alignments for pseudomorphic InP/InxGa1-xAs heterostructures for growth on (001)InP von PEOPLE, R

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Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N - n heterojunction by C - V profiling von People, R., Wecht, K. W., Alavi, K., Cho, A. Y.

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Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing von CHAND, N, PEOPLE, R, BAIOCCHI, F. A, WECHT, K. W, CHO, A. Y

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Correspondence between coherently strained multilayers and a single coherently strained layer on lattice mismatched substrate von PEOPLE, R

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Modulation doping in GexSi1-x/Si strained layer heterostructures von PEOPLE, R, BEAN, J. C, LANG, D. V, SERGENT, A. M, STORMER, H. L, WECHT, K. W, LYNCH, R. T, BALDWIN, K

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Long-wavelength photoluminescence of InAs1-xSbx(0<x<1) grown by molecular beam epitaxy on (100) InAs von YEN, M. Y, PEOPLE, R, WECHT, K. W, CHO, A. Y

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Broad-band tunable electroabsorption modulated laser for WDM application von Tanbun-Ek, T., Adams, L.E., Nykolak, G., Bethea, C., People, R., Sergent, A.M., Wisk, P.W., Sciortino, P.F., Chu, S.N.G., Fullowan, T., Pawelek, R., Tsang, W.T.

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NORMAL INCIDENCE HOLE INTERSUBBAND QUANTUM-WELL INFRARED PHOTODETECTORS IN PSEUDOMORPHIC GEXSI1-X/SI von PEOPLE, R, BEAN, JC, SPUTZ, SK, BETHEA, CG, PETICOLAS, LJ

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Tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser von Tanbun-Ek, T., People, R., Fullowan, T., Bethea, C., Sergent, A.M., Wisk, P.W., Sciortino, P.F., Chu, S.N.G., Tsang, W.T.

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Effects of coherency strain on the band gap of pseudomorphic InxGa1-xAs on (001) InP von PEOPLE, R

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Indirect band gap and band alignment for coherently strained SixGe1-x bulk alloys on germanium (001) substrates von People, R

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Band nonparabolicities in lattice-mismatch-strained bulk semiconductor layers von People, R, Sputz, SK

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