Urgent Care Centers and what you need to know von Pennington, Gary A.

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Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor von Potbhare, Siddharth, Goldsman, Neil, Pennington, Gary, Lelis, Aivars, McGarrity, James M.

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A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges von Potbhare, Siddharth, Goldsman, Neil, Pennington, Gary, Lelis, Aivars, McGarrity, James M.

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Myoepithelial carcinoma of the digit von Henning, Ania, Pennington, Gary, Deeken, Amy, Srivastava, Swati

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Management of Iatrogenic Injury to the Spinal Accessory Nerve von Chandawarkar, Rajiv Y, Cervino, Lawrence A, Pennington, Gary A

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Intraoperative Acute Tissue Expansion Revisited: A Valuable Tool for Challenging Skin Defects von Chandawarkar, Rajiv Y., Cervino, A. Lawrence, Pennington, Gary A.

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Electron Transport and Velocity Oscillations in a Carbon Nanotube von Akturk, A.., Pennington, G.., Goldsman, N.., Wickenden, A..

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Terahertz current oscillations in single-walled zigzag carbon nanotubes von Akturk, Akin, Goldsman, Neil, Pennington, Gary, Wickenden, Alma

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Self-consistent ensemble Monte Carlo simulations show terahertz oscillations in single-walled carbon nanotubes von Akturk, Akin, Goldsman, Neil, Pennington, Gary

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Quantum modeling and proposed designs of CNT-embedded nanoscale MOSFETs von Akturk, A., Pennington, G., Goldsman, N.

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Nitrogen adsorption phases on the 4H–SiC(0 0 0 1) Si-face von Ashman, Christopher R., Pennington, Gary

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Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds von Pennington, Gary, Ashman, C.R.

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A closed form memristor SPICE model and oscillator von Abraham, I., Kaya, S., Pennington, G.

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Sensitivity of Carbon Nanotube Transistors to a Charged Dielectric Coating von Pennington, G., Ervin, M.H., Wickenden, A.E.

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A quasi-two-dimensional depth-dependent mobility model suitablefor device simulation for Coulombic scattering due to interfacetrapped charges von Potbhare, Siddharth, Goldsman, Neil, Pennington, Gary, Lelis, Aivars, McGarrity, James M.

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Numerical and experimental characterization of 4 H -silicon carbide lateral metal-oxide-semiconductor field-effect transistor von Potbhare, Siddharth, Goldsman, Neil, Pennington, Gary, Lelis, Aivars, McGarrity, James M.

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Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs von McGarrity, J.M., Potbhare, Siddharth, Lelis, Aivars J., Pennington, Gary, Goldsman, Neil

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First-principles study of oxygen adsorption on the nitrogen-passivated 4 H -SiC (0001) silicon face von Ashman, Christopher R., Pennington, Gary

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Intraoperative Acute Tissue Expansion Revisited: A Valuable Tool for Challenging Skin Defects von CHANDAWARKAR, RAJIV Y., CERVINO, A. LAWRENCE, PENNINGTON, GARY A.

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Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2 von Potbhare, Siddharth, Habersat, Daniel B., Lelis, Aivars J., Pennington, Gary, Goldsman, Neil

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