Site-specific excitation of Eu ions in GaN von Tafon Penn, S., Fleischman, Z., Dierolf, V.

Volltext

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile von Zhao, Hongping, Liu, Guangyu, Li, Xiao-Hang, Huang, G. S., Poplawsky, Jonathan D., Penn, S. Tafon, Dierolf, Volkmar, Tansu, Nelson

Volltext

SU‐GG‐T‐170: Using a 3D Diode Array System to Perform Routine IMRT Machine QA von Penn, S Tafon, Xue, T

Volltext

SU‐GG‐T‐30: A Simple Optimization Method for Multi‐Lumen Balloon Breast Brachytherapy and Comparisons with Single Dwell Position Balloon Breast Brachytherapy von Penn, S Tafon, Xue, T

Volltext

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded-temperature profile von Hongping Zhao, Guangyu Liu, Xiaohang Li, Huang, G.S., Penn, S.T., Dierolf, V., Tansu, N.

Volltext

Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm von Hongping Zhao, Huang, G.S., Guangyu Liu, Xiaohang Li, Poplawsky, J.D., Penn, S.T., Dierolf, V., Tansu, N.

Volltext

In-situ confocal luminescence microscopy study of lithium niobate during domain inversion von Sandmann, C., Penn, T.S., Dierolf, V.

Volltext bestellen

The Site Selectivity of the E-beam Excitation of Eu ion in GaN von Penn, Samson Tafon, Fleischman, Zackery, Dierolf, Volkmar

Volltext bestellen