Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques von Piotrowska, A., Guivarc'h, A., Pelous, G.

Volltext

Laser direct writing of gold tracks from decomposition of organometallic screen ink von Tonneau, D., Bouree, J. E., Correia, A., Roche, G., Pelous, G., Verdeyme, S.

Volltext

Chemical cleaning of InP surfaces: oxide composition and electrical properties von GUIVARĆH, A, L'HARIDON, H, PELOUS, G, HOLLINGER, G, PERTOSA, P

Volltext

Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations von Lecrosnier, D., Paugam, J., Pelous, G., Richou, F., Salvi, M.

Volltext

Minority-carrier lifetime study of the pressure induced Γ- X crossover in GaAs von Leroux, M., Pelous, G., Raymond, F., Verie, C.

Volltext

Epitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperature von Auvray, P., Guivarc’h, A., L’Haridon, H., Pelous, G., Salvi, M., Henoc, P.

Volltext

Study of buried silicon nitride layers synthesized by ion implantation von Bourguet, P., Dupart, J. M., Le Tiran, E., Auvray, P., Guivarc’h, A., Salvi, M., Pelous, G., Henoc, P.

Volltext

Reaction kinetics of molybdenum thin films on silicon (111) surface von Guivarc’h, A., Auvray, P., Berthou, L., Le Cun, M., Boulet, J. P., Henoc, P., Pelous, G., Martinez, A.

Volltext

On the formation of binary compounds in Au/InP system von Piotrowska, A., Auvray, P., Guivarc’h, A., Pelous, G., Henoc, P.

Volltext

Effects of annealing on unintentionally doped LEC InP von Paris, J.C., Gauneau, M., L'Haridon, H., Pelous, G.

Volltext

Influence of phosphorus-induced point defects on a gold-gettering mechanism in silicon von Lecrosnier, D., Paugam, J., Richou, F., Pelous, G., Beniere, F.

Volltext

Thermal generation of carriers in gold-doped silicon von Richou, F., Pelous, G., Lecrosnier, D.

Volltext

Metallurgical and electrical properties of chromium silicon interfaces von Martinez, A., Esteve, D., Guivarc'h, A., Auvray, P., Henoc, P., Pelous, G.

Volltext

Long-range enhancement of boron diffusivity induced by a high-surface-concentration phosphorus diffusion von Lecrosnier, D., Gauneau, M., Paugam, J., Pelous, G., Richou, F.

Volltext

Properties of vanadium in InP von Lambert, B., Deveaud, B., Toudic, Y., Pelous, G., Paris, J.C., Grandpierre, G.

Volltext

Growth of platinum silicide under protective layers von Joubert, P., Auvray, P., Guivarc’h, A., Pelous, G.

Volltext

Al/Al2O3/InP MIS structures von Favennec, P. N., Le Contellec, M., L’Haridon, H., Pelous, G. P., Richard, J.

Volltext

Long range enhancement of boron diffusivity by phosphorus diffusion von Lecrosnier, D., Pelous, G., Richou, F.

Volltext

Composition of anodic oxides grown on InP von Salvi, M., Favennec, P.N., L'Haridon, H., Pelous, G.P.

Volltext

Investigation of ion-implantation damage with x-ray double reflection von Lecrosnier, D. P., Pelous, G. P., Burgeat, J.

Volltext