Worst-case bias during total dose irradiation of SOI transistors von Ferlet-Cavrois, V., Colladant, T., Paillet, P., Leray, J.L., Musseau, O., Schwank, J.R., Shaneyfelt, M.R., Pelloie, J.L., du Port de Poncharra, J.

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Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V) von Ferlet-Cavrois, V., Paillet, P., Musseau, O., Leray, J.L., Faynot, O., Raynaud, C., Pelloie, J.L.

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Laser probing of bipolar amplification in 0.25-/spl mu/m MOS/SOI transistors von Musseau, O., Ferlet-Cavrois, V., Pelloie, J.L., Buchner, S., McMorrow, D., Campbell, A.B.

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Hot-carrier effects in deep submicron SOI MOSFETs von Renn, S.H., Pelloie, J.L., Balestra, F.

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Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology von Dentan, M., Abbon, P., Borgeaud, P., Delagnes, E., Fourches, N., Lachartre, D., Lugiez, F., Paul, B., Rouger, M., Truche, R., Blanc, J.P., Faynot, O., Leroux, C., Delevoye-Orsier, E., Pelloie, J.L., de Pontcharra, J., Flament, O., Guebhard, J.M., Leray, J.L., Montaron, J., Musseau, O., Vitez, A., Le Mouellic, C., Corbiere, T., Dantec, A., Festes, G., Martinez, J., Rodde, K.

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Effect of rapid thermal annealing on radiation hardening of MOS devices von Flament, O., Leray, J.L., Martin, F., Orsier, E., Pelloie, J.L., Truche, R., Devine, R.A.B.

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Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor von Brisset, C., Ferlet-Cavrois, V., Flament, O., Musseau, O., Leray, J.L., Pelloie, J.L., Escoffier, R., Michez, A., Cirba, C., Bordure, G.

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Total dose induced latch in short channel NMOS/SOI transistors von Ferlet-Cavrois, V., Quoizola, S., Musseau, O., Flament, O., Leray, J.L., Pelloie, J.L., Raynaud, C., Faynot, O.

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Impact of floating body and BS-tied architectures on SOI MOSFET's radio-frequency performances von Rozeau, O., Jomaah, J., Boussey, J., Raynaud, C., Pelloie, J.L., Balestra, F.

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A thorough investigation of the degradation induced by hot-carrier injection in deep submicron N- and P-channel partially and fully depleted unibond and SIMOX MOSFETs von Shing-Hwa Renn, Raynaud, C., Pelloie, J.-L., Balestra, F.

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Compact analytical modeling of SOI partially depleted MOSFETs with LETISOI von Faynot, O., Poiroux, T., Pelloie, J.L.

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SOI design challenges von Dufourt, D., Pelloie, J.L.

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Using SOI to achieve low-power consumption in digital von Pelloie, J.L.

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Impact of front oxide quality on transient effects and low-frequency noise in partially and fully depleted SOI N-MOSFETs von Haendler, S., Dieudonné, F., Jomaah, J., Balestra, F., Raynaud, C., Pelloie, J.L.

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Characterization of the parasitic bipolar transistor in SOI technology: comparison between direct and indirect triggering techniques von Flament, O., Musseau, O., Ferlet-Cavrois, V., Colladant, T., Pelloie, J.L., Buchner, S., McMorrow, D., Campbell, A.B.

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A new method for characteristic impedance determination on lossy substrate von Bracale, A., Pasquet, D., Gautier, J.L., Fel, N., Ferlet, V., Pelloie, J.L.

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Laser probing of bipolar amplification in 0.25-[micro]m MOS/SOI transistors von Musseau, O, Ferlet-Cavrois, V, Pelloie, J.L, Buchner, S, McMorrow, D, Campbell, A.B

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65nm CMOS BULK to SOI comparison von Pelloie, J.L., Laplanche, Y., Chen, T.F., Huang, Y.T., Liu, P.W., Chiang, W.T., Huang, M.Y.T., Tsai, C.H., Cheng, Y.C., Tsai, C.T., Ma, G.H.

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CMOS/SOI technologies for low-power and low-voltage circuits von Pelloie, J.L., Raynaud, C., Faynot, O., Grouillet, A., Du Port de Pontcharra, J.

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Mobility modeling of SOI MOSFETs in the high temperature range von Reichert, G., Ouisse, T., Pelloie, J.L., Cristoloveanu, S.

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