Modification of SiO through room-temperature plasma treatments, rapid thermal annealings, and laser irradiation in a nonoxidizing atmosphere von ROCHET, F, DUFOUR, G, ROULET, H, PELLOIE, B, PERRIERE, J, FOGARASSY, E, SLAOUI, A, FROMENT, M

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Plasma transformation of SiO films in SiO2 at room temperature von PERRIERE, J, PELLOIE, B, FOGARASSY, E, SLAOUI, A

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Study of the ionic transport during anodization by nuclear microanalysis and secondary ion mass spectroscopy von MONTERO, I, PELLOIE, B, PERRIERE, J, PIVIN, J. C, ALBELLA, J. M

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Ionic movement during oxide growth by plasma anodization von Perrière, J., Pelloie, B., Siejka, J.

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Investigation of ionic transport mechanisms during plasma anodization of Si and Si through ZrO2 von PELLOIE, B, PERRIERE, J, SIEJKA, J, DEBENEST, P, STRABONI, A, VUILLERMOZ, B

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Plasma transformation of SiO films in SiO 2 at room temperature von Perrière, J., Pelloie, B., Fogarassy, E., Slaoui, A.

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Modification of SiO through room-temperature plasma treatments, rapid thermal annealings and laser irradiation in a non-oxidizing atmosphere von Rochet, F., Dufour, G., Roulet, H., Pelloie, B., Perriere, J., Fogarassy, E., Slaoui, A., Froment, M.

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Plasma Anodization of Silicides von Pelloie, B., Perriere, J., Enard, J. P., Laurent, A., Montero, I., Climient, A., Perez, R., Martinez-Duart, J. M., Nipoti, R., Guerri, S.

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Laser probing of bipolar amplification in 0.25- mu m MOS/SOI transistors von Musseau, O, Ferlet-Cavrois, V, Pelloie, J L, Buchner, S, McMorrow, D, Campbell, AB

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Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology von Dentan, M., Abbon, P., Borgeaud, P., Delagnes, E., Fourches, N., Lachartre, D., Lugiez, F., Paul, B., Rouger, M., Truche, R., Blanc, J.P., Faynot, O., Leroux, C., Delevoye-Orsier, E., Pelloie, J.L., de Pontcharra, J., Flament, O., Guebhard, J.M., Leray, J.L., Montaron, J., Musseau, O., Vitez, A., Le Mouellic, C., Corbiere, T., Dantec, A., Festes, G., Martinez, J., Rodde, K.

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Charge collection in submicron CMOS/SOI technology von Musseau, O., Ferlet-Cavrois, V., Campbell, A.B., Knudson, A.R., Stapor, W.J., McDonald, P.T., Pelloie, J.L., Raynaud, C.

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DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics von Dentan, M., Abbon, P., Delagnes, E., Fourches, N., Lachartre, D., Lugiez, F., Paul, B., Rouger, M., Truche, R., Blanc, J.P., Leroux, C., Delevoye-Orsier, E., Pelloie, J.L., de Pontcharra, J., Flament, O., Guebhard, J.M., Leray, J.L., Montaron, J., Musseau, O., Vitez, A., Blanquart, L., Aubert, J.J., Bonzom, V., Delpierre, P., Habrard, M.C., Mekkaoui, A., Potheau, R., Ardelean, J., Hrisoho, A., Breton, D.

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Effect of rapid thermal annealing on radiation hardening of MOS devices von Flament, O., Leray, J.L., Martin, F., Orsier, E., Pelloie, J.L., Truche, R., Devine, R.A.B.

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Detailed characterization of Unibond material von Munteanu, D., Maleville, C., Cristoloveanu, S., Moriceau, H., Aspar, B., Raynaud, C., Faynot, O., Pelloie, J-L., Auberton-Hervé, A-J.

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Laser probing of bipolar amplification in 0.25-mum MOS/SOI transistors von Musseau, O, Ferlet-Cavrois, V, Pelloie, J L, Buchner, S, McMorrow, D, Campbell, A B

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Laser probing of bipolar amplification in 0.25-micron MOS/SOI transistors von Musseau, O, Ferlet-Cavrois, V, Pelloie, J L, Buchner, S, McMorrow, D, Campbell, A B

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Scalability of fully-depleted SOI technology into 0.13 /spl mu/m 1.2 V-1 V CMOS generation von Raynaud, C., Faynot, O., Pelloie, J.L., Martin, F., Tedesco, S., Cluzel, J., Grouillet, A., Dal'zotto, B., Vanhoenacker, D.

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Sub-0.25 /spl mu/m ultra-thin SOI CMOS with a single N+ gate process for low-voltage and low-power applications von Raynaud, C., Faynot, O., Pelloie, J.L., Tedesco, S., Ullmann, B., Dunne, B., Guegan, G., Lerme, M.

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A scalable SOI technology for three successive generations: 0.18, 0.13 and 0.1 /spl mu/m for low-voltage and low-power applications von Pelloie, J.L., Faynot, O., Raynaud, C., Dunne, B., Martin, F., Tedesco, S., Hartmann, J.

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Fully-depleted accumulation-mode PMOSFET for 0.2 /spl mu/m SOI technology von Raynaud, C., Pelloie, J.L., Faynot, O., Dunne, B., Hartmann, J.

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