Single-Event Response of 22-nm Fully Depleted Silicon-on-Insulator Static Random Access Memory von Casey, Megan C., Stansberry, Scott D., Seidleck, Christina M., Maharrey, Jeffrey A., Gamboa, Dante, Pellish, Jonathan A., Label, Kenneth A.

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Observation of Low-Energy Proton Direct Ionization in a 72-Layer 3-D NAND Flash Memory von Wilcox, Edward P., Breeding, Matthew L., Casey, Megan C., Pellish, Jonathan A., Reed, Robert A., Alles, Michael L., Schrimpf, Ronald D.

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Single-Event Transient Case Study for System-Level Radiation Effects Analysis von Campola, Michael J., Austin, Rebekah A., Wilcox, Edward P., Kim, Hak S., Ladbury, Raymond L., Label, Kenneth A., Pellish, Jonathan A.

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Muon-Induced Single Event Upsets in Deep-Submicron Technology von Sierawski, Brian D, Mendenhall, Marcus H, Reed, Robert A, Clemens, Michael A, Weller, Robert A, Schrimpf, Ronald D, Blackmore, Ewart W, Trinczek, Michael, Hitti, Bassam, Pellish, Jonathan A, Baumann, Robert C, Shi-Jie Wen, Wong, Rick, Tam, Nelson

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32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches von Rodbell, K. P., Heidel, D. F., Pellish, J. A., Marshall, P. W., Tang, H. H. K., Murray, C. E., LaBel, K. A., Gordon, M. S., Stawiasz, K. G., Schwank, J. R., Berg, M. D., Kim, H. S., Friendlich, M. R., Phan, A. M., Seidleck, C. M.

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Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies von Pellish, Jonathan A., Marshall, Paul W., Rodbell, Kenneth P., Gordon, Michael S., LaBel, Kenneth A., Schwank, James R., Dodds, Nathaniel A., Castaneda, Carlos M., Berg, Melanie D., Kim, Hak S., Phan, Anthony M., Seidleck, Christina M.

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Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions von Sierawski, B.D., Pellish, J.A., Reed, R.A., Schrimpf, R.D., Warren, K.M., Weller, R.A., Mendenhall, M.H., Black, J.D., Tipton, A.D., Xapsos, M.A., Baumann, R.C., Xiaowei Deng, Campola, M.J., Friendlich, M.R., Kim, H.S., Phan, A.M., Seidleck, C.M.

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The Susceptibility of 45 and 32 nm Bulk CMOS Latches to Low-Energy Protons von Seifert, N., Gill, B., Pellish, J. A., Marshall, P. W., LaBel, K. A.

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IEEE Nuclear and Space Radiation Effects Conference: Notes on the Early Conferences von Pellish, Jonathan A., Galloway, Kenneth F.

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Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements von Schwank, J R, Shaneyfelt, M R, McMorrow, D, Ferlet-Cavrois, V, Dodd, P E, Heidel, D F, Marshall, P W, Pellish, J A, LaBel, K A, Rodbell, K P, Hakey, M, Flores, R S, Swanson, S E, Dalton, S M

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Hardness Assurance Testing for Proton Direct Ionization Effects von Schwank, J. R., Shaneyfelt, M. R., Ferlet-Cavrois, V., Dodd, P. E., Blackmore, E. W., Pellish, J. A., Rodbell, K. P., Heidel, D. F., Marshall, P. W., LaBel, K. A., Gouker, P. M., Tam, N., Wong, R., Shi-Jie Wen, Reed, R. A., Dalton, S. M., Swanson, S. E.

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Single Event Induced Multiple Bit Errors and the Effects of Logic Masking von Berg, Melanie D., Kim, Hak S., Phan, Anthony D., Seidlick, Christina M., LaBel, Kenneth A., Pellish, Jonathan A.

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Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs von Turowski, W, Pellish, J A, Moen, K A, Raman, A, Cressler, J D, Reed, R A, Guofu Niu

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Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates for Sub-130 nm Technologies von Pellish, Jonathan A, Xapsos, Michael A, Stauffer, Craig A, Jordan, Thomas M, Sanders, Anthony B, Ladbury, Raymond L, Oldham, Timothy R, Marshall, Paul W, Heidel, David F, Rodbell, Kenneth P

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NASA Goddard Space Flight Center’s Compendium of Recent Single Event Effects Results von O'Bryan, Martha V, Label, Kenneth A, Wilcox, Edward P, Chen, Dakai, Wyrwas, Edward J, Campola, Michael J, Casey, Megan C, Lauenstein, Jean-Marie, Topper, Alyson D., Szabo, Carl M, Pellish, Jonathan A, Berg, Melanie D, Lewellen, John W., Holloway, Michael A.

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Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16-300 K von Marshall, Cheryl J, Marshall, Paul W, Ladbury, Raymond L, Waczynski, Augustyn, Arora, Rajan, Foltz, Roger D, Cressler, John D, Kahle, Duncan M, Dakai Chen, Delo, Gregory S, Dodds, Nathaniel A, Pellish, Jonathan A, Kan, Emily, Boehm, Nicholas, Reed, R A, LaBel, Kenneth A

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Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs von Tipton, A.D., Pellish, J.A., Hutson, J.M., Baumann, R., Deng, X., Marshall, A., Xapsos, M.A., Kim, H.S., Friendlich, M.R., Campola, M.J., Seidleck, C.M., LaBel, K.A., Mendenhall, M.H., Reed, R.A., Schrimpf, R.D., Weller, R.A., Black, J.D.

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Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools von Warren, K.M., Sierawski, B.D., Weller, R.A., Reed, R.A., Mendenhall, M.H., Pellish, J.A., Schrimpf, R.D., Massengill, L.W., Porter, M.E., Wilkinson, J.D.

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Assessing Alpha Particle-Induced Single Event Transient Vulnerability in a 90-nm CMOS Technology von Gadlage, M.J., Schrimpf, R.D., Narasimham, B., Pellish, J.A., Warren, K.M., Reed, R.A., Weller, R.A., Bhuva, B.L., Massengill, L.W., Xiaowei Zhu

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Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs von Schwank, J. R., Shaneyfelt, M. R., Dodd, P. E., McMorrow, D., Warner, J. H., Ferlet-Cavrois, V., Gouker, P. M., Melinger, J. S., Pellish, J. A., Rodbell, K. P., Heidel, D. F., Marshall, P. W., LaBel, K. A., Swanson, S. E.

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