Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap von Jayaprakash, R., Kalaitzakis, F. G., Christmann, G., Tsagaraki, K., Hocevar, M., Gayral, B., Monroy, E., Pelekanos, N. T.

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A GaAs polariton light-emitting diode operating near room temperature von Tsintzos, S. I., Pelekanos, N. T., Konstantinidis, G., Hatzopoulos, Z., Savvidis, P. G.

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Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots von Simon, J., Pelekanos, N. T., Adelmann, C., Martinez-Guerrero, E., André, R., Daudin, B., Dang, Le Si, Mariette, H.

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Room temperature observation of biexcitons in exfoliated WS2 monolayers von Paradisanos, I., Germanis, S., Pelekanos, N. T., Fotakis, C., Kymakis, E., Kioseoglou, G., Stratakis, E.

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Ultra-smooth GaN membranes by photo-electrochemical etching for photonic applications von Jayaprakash, R., Kalaitzakis, F. G., Kayambaki, M., Tsagaraki, K., Monroy, E., Pelekanos, N. T.

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Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications von Moratis, K., Tan, S. L., Germanis, S., Katsidis, C., Androulidaki, M., Tsagaraki, K., Hatzopoulos, Z., Donatini, F., Cibert, J., Niquet, Y. -M., Mariette, H., Pelekanos, N. T.

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Absorption in ultrathin GaN-based membranes: The role of standing wave effects von Amargianitakis, E. A., Jayaprakash, R., Kalaitzakis, F. G., Delamadeleine, E., Monroy, E., Pelekanos, N. T.

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Non-polar GaN/AlGaN quantum-well polariton laser at room temperature von Amargianitakis, E. A., Tsagaraki, K., Kostopoulos, A., Konstantinidis, G., Delamadeleine, E., Monroy, E., Pelekanos, N. T.

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Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations von Rouvière, J. L., Simon, J., Pelekanos, N., Daudin, B., Feuillet, G.

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Extraction of absorption coefficients from as-grown GaN nanowires on opaque substrates using all-optical method von Jayaprakash, R, Ajagunna, D, Germanis, S, Androulidaki, M, Tsagaraki, K, Georgakilas, A, Pelekanos, N T

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Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications von Kalaitzakis, F.G., Iliopoulos, E., Konstantinidis, G., Pelekanos, N.T.

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Giant electric fields in unstrained GaN single quantum wells von Langer, R., Simon, J., Ortiz, V., Pelekanos, N. T., Barski, A., André, R., Godlewski, M.

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Nanostructure and strain properties of core-shell GaAs AlGaAs nanowires von Kehagias, Th, Florini, N, Kioseoglou, J, Pavloudis, Th, Komninou, Ph, Walther, T, Moratis, K, Hatzopoulos, Z, Pelekanos, N T

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InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy von Iliopoulos, E., Georgakilas, A., Dimakis, E., Adikimenakis, A., Tsagaraki, K., Androulidaki, M., Pelekanos, N. T.

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Growth kinetics and optical properties of self-organized GaN quantum dots von Widmann, F., Daudin, B., Feuillet, G., Samson, Y., Rouvière, J. L., Pelekanos, N.

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All-dielectric GaN microcavity: Strong coupling and lasing at room temperature von Daskalakis, K. S., Eldridge, P. S., Christmann, G., Trichas, E., Murray, R., Iliopoulos, E., Monroy, E., Pelekanos, N. T., Baumberg, J. J., Savvidis, P. G.

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Spatially selective reversible charge carrier density tuning in WS2 monolayers via photochlorination von Demeridou, I, Paradisanos, I, Liu, Yuanyue, Pliatsikas, N, Patsalas, P, Germanis, S, Pelekanos, N T, Goddard, W A, Kioseoglou, G, Stratakis, E

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Transferrable dielectric DBR membranes for versatile GaN-based polariton and VCSEL technology von Amargianitakis, E.A., Kazazis, S.A., Doundoulakis, G., Stavrinidis, G., Konstantinidis, G., Delamadeleine, E., Monroy, E., Pelekanos, N.T.

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Improved quality GaN grown by molecular beam epitaxy using In as a surfactant von Widmann, F., Daudin, B., Feuillet, G., Pelekanos, N., Rouvière, J. L.

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Effect of boiling aqua regia on MOCVD and MBE p-type GaN surfaces and Cr/p-GaN interfaces von Kalaitzakis, F.G., Konstantinidis, G., Sygellou, L., Kennou, S., Ladas, S., Pelekanos, N.T.

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