Physico-Chemical Processes Induced by Electrical Breakdown and Discharge Responsible for Memory Effect in Krypton with < 10 ppm Nitrogen von Pejović, Milić M., Pejović, Momčilo M., Stanković, Koviljka

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P-channel MOSFET as ionizing radiation detector von Pejović, Milić M., Pejović, Svetlana M.

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Kinetics of positive ions and electrically neutral active particles in afterglow in neon at low pressure von Pejović, Milić M., Nešić, Nikola T., Pejović, Momčilo M.

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Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices von Pejovic, Milic M., Denic, Dragan B., Pejovic, Momcilo M., Nesic, Nikola T., Vasovic, Nikola

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Xenon-filled diode performance under influence of low doses of gamma radiation von Pejović, Milić M., Živanović, Emilija N., Stojanović, Milan D.

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Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation von Jelenković, Emil V, Ristić, G S, Pejović, M M, Jevtić, Milan M, Jha, Shrawan K, Videnović-Mišić, Mirjana, Pejović, M, Tong, K Y

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Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays von Jha, S., Jelenković, Emil V., Pejović, M.M., Ristić, G.S., Pejović, M., Tong, K.Y., Surya, C., Bello, I., Zhang, W.J.

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Influence of low dose rate gamma radiation on breakdown voltage and electrical breakdown time delay of working gas Geiger-Muller chamber von Pejović, Milić M.

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The Influence of the Magnetic Field on DC and the Impulse Breakdown of Noble Gases von Belić, Čedomir I, Stanković, Koviljka Đ, Pejović, Milić M, Osmokrović, Predrag V

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VDMOSFET as a prospective dosimeter for radiotherapy von Pejović, Milić M, Pejović, Svetlana M

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Small dose effect in RADFET with thick gate oxide von Pejović, Svetlana M., Pejović, Milić M., Živanović, Miloš

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The possibility for gamma and UV radiation detection based on electrical breakdown time delay measurement in krypton and xenon filled diodes von Pejovic, Milic, Zivanovic, Emilija, Belic, Cedomir

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The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET von Obrenovic, Marija, Pejovic, Milic, Lazarevic, Djordje, Kartalovic, Nenad

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Processes in afterglow responsible for initiation of electrical breakdown in xenon at low pressure von PEJOVIC, MOMCILO M, SPASIC, IVANA V, PEJOVIC, MILIC M, NESIC, NIKOLA T, BRAJOVIC, DRAGAN V

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Kinetics of ions and neutral active states in the afterglow and their influence on the memory effect in nitrogen at low pressures von PEJOVIC, Momcilo M, ZIVANOVIC, Emilija N, PEJOVIC, Milic M

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Dose response, radiation sensitivity and signal fading of p-channel MOSFETs (RADFETs) irradiated up to 50 Gy with ⁶⁰Co von Pejović, Milić M

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Analysis of processes responsible for the memory effect in air at low pressures von PEJOVIC, Momčilo M, ZIVANOVIC, Emilija N, PEJOVIC, Milić M, KARAMARKOVIC, Jugoslav P

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Processes in radiation sensitive MOSFETs during irradiation and post irradiation annealing responsible for threshold voltage shift von Pejovic, Milic M

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The influence of some species formed during the discharge and gamma and UV radiation on breakdown voltage and time delay in nitrogen and neon at low pressure von PEJOVIC, Momcilo M, PEJOVIC, Milic M

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Different Types of Field-Effect Transistors: Theory and Applications von Momcilo M. Pejovic, Milic M. Pejovic

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