Structure stability of short-period InAs/AlSb superlattices von Xu, Dapeng, Litvinchuk, A.P., Wang, X., Delaney, A., Le, H., Pei, S.S.

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Sorptive Activity and Hydrophobic Behavior of Aerogels Based on Reduced Graphene Oxide and Carbon Nanotubes von Sultanov, F., Bakbolat, B., Daulbaev, Ch, Urazgalieva, A., Azizov, Z., Mansurov, Z., Tulepov, M., Pei, S. S.

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Aerogels Based on Microwave Plasma Torch Synthesized Graphene von Huang, K.P., Chang, S.C., Xing, S., Pei, S.S., Mansurov, Z.A., Robles-Hernandez, F., Chi, Y.W., Sultanov, Fail R.

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High power mid-infrared interband cascade lasers based on type-II quantum wells von Yang, Rui Q., Yang, B. H., Zhang, D., Lin, C.-H., Murry, S. J., Wu, H., Pei, S. S.

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Interband cascade laser emitting >1 photon per injected electron von Felix, C.L., Bewley, W.W., Vurgaftman, I., Meyer, J.R., Zhang, D., Lin, C.-H., Yang, R.Q., Pei, S.S.

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High mobility ambipolar field effect transistors made from large-scale CVD graphitic thin films von Helin Cao, Qingkai Yu, Childres, I., Pei, S.S., Chen, Y.P.

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Batch fabrication and operation of GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arrays von D'Asaro, L.A., Chirovsky, L.M.F., Laskowski, E.J., Pei, S.S., Woodward, T.K., Lentine, A.L., Leibenguth, R.E., Focht, M.W., Freund, J.M., Guth, G.G., Smith, L.E.

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Effects of internal loss on power efficiency of mid-infrared InAs-GaInSb-AlSb quantum-well lasers and comparison with InAsSb lasers von Le, H.Q., Lin, C.H., Murray, S.J., Yang, R.Q., Pei, S.S.

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Room-temperature low-threshold type-II quantum-well lasers at 4.5 μm von Chih-Hsiang Lin, Rui Q. Yang, Murry, S.J., Pei, S.S., Chi Yan, McDaniel, D.L., Falcon, M.

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MBE grown mid-infrared type-II quantum-well lasers von Lin, Chih-Hsiang, Murry, S.J., Zhang, D., Chang, P.C., Zhou, Yucai, Pei, S.S., Malin, J.I., Felix, C.L., Meyer, J.R., Hoffman, C.A., Pinto, J.F.

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Logic delays of 5-μm current-switched Josephson gates von Pei, S. S.

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Carrier Transport in type-II Mid-IR Interband Cascade Laser von Peng Peng, Yao-Ming Mu, Pei, S.S.

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XSTM characterization of GaSb/InAs heterojunctions: observation of white noise in the interface roughness spectrum von Harper, J., Weimer, M., Zhang, D., Lin, C.-H., Pei, S.S.

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Ion beam oxidation for Josephson circuit applications von PEI, S. S, VAN DOVER, R. B

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Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit von Woodward, T.K., Chirovsky, L.M.F., Lentine, A.L., D'Asaro, L.A., Laskowski, E.J., Focht, M., Guth, G., Pei, S.S., Ren, F., Przybylek, G.J., Smith, L.E., Leibenguth, R.E., Asom, M.T., Kopf, R.F., Kuo, J.M., Feuer, M.D.

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Multi-spectral laser sensor based on code-division-multiplexing techniques von Wang, Y., Morbi, Z., Ho, D.B., Le, H.Q., Guo, B.-J., Pei, S.S.

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Structure stability of short-period InAs/AlSb superlattices von Xu, D.P., Litvinchuk, A., Delaney, A., Wang, X., Le, H., Pei, S.S.

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A simple high-performance current-switched Josephson gate von Fulton, T. A., Pei, S. S., Dunkleberger, L. N.

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A 10-GHz frequency divider using selectively doped heterostructure transistors von Hendel, R.H., Pei, S.S., Kiehl, R.A., Tu, C.W., Feuer, M.D., Dingle, R.

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Broadly /spl lambda/-tunable external cavity mid-infrared quantum cascade (QC) lasers at high temperatures von Luo, G.P., Peng, C., Le, H.Q., Pei, S.S., Lee, H., Hwang, W.-Y., Ishaug, B., Zheng, J.

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