Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy von Yakimov, Eugene B., Polyakov, Alexander Y., Nikolaev, Vladimir I., Pechnikov, Alexei I., Scheglov, Mikhail P., Yakimov, Eugene E., Pearton, Stephen J.

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Point defect creation by proton and carbon irradiation of α-Ga2O3 von Polyakov, Alexander Y., Nikolaev, Vladimir I., Meshkov, Igor N., Siemek, Krzysztof, Lagov, Petr B., Yakimov, Eugene B., Pechnikov, Alexei I., Orlov, Oleg S., Sidorin, Alexey A., Stepanov, Sergey I., Shchemerov, Ivan V., Vasilev, Anton A., Chernykh, Alexey V., Losev, Anton A., Miliachenko, Alexandr D., Khrisanov, Igor A., Pavlov, Yu.S., Kobets, U. A., Pearton, Stephen J.

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Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates von Polyakov, Alexander Y., Nikolaev, Vladimir I., Tarelkin, Sergey A., Pechnikov, Alexei I., Stepanov, Sergey I., Nikolaev, Andrey E., Shchemerov, Ivan V., Yakimov, Eugene B., Luparev, Nikolay V., Kuznetsov, Mikhail S., Vasilev, Anton A., Kochkova, Anastasiya I., Voronova, Marina I., Scheglov, Mikhail P., Kim, Jihyun, Pearton, Stephen J.

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Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs von Polyakov, Alexander Y., Yakimov, Eugene B., Nikolaev, Vladimir I., Pechnikov, Alexei I., Miakonkikh, Andrej V., Azarov, Alexander, Lee, In-Hwan, Vasilev, Anton A., Kochkova, Anastasiia I., Shchemerov, Ivan V., Kuznetsov, Andrej, Pearton, Stephen J.

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Halide Vapor Phase Epitaxy of In2O3 and (In1−xGax)2O3 on Sapphire Substrates and GaN/Al2O3 Templates von Stepanov, Sergey, Nikolaev, Vladimir, Pechnikov, Alexei, Scheglov, Mikhail, Chikiryaka, Andrei, Chernykh, Alexey, Odnobludov, Maxim, Andreeva, Valentina, Polyakov, Alexander Y.

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Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios von Shapenkov, Sevastian, Vyvenko, Oleg, Nikolaev, Vladimir, Stepanov, Sergei, Pechnikov, Alexei, Scheglov, Mikhail, Varygin, Georgiy

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UV Detectors Based on In₂O₃-Ga₂O₃ Composite Films von Almaev, Aleksei, Almaev, Dmitry, Nikolaev, Vladimir, Scheglov, Mikhail, Chikiryaka, Andrei, Pechnikov, Alexei, Kosmachev, Pavel, Korusenko, Petr, Koroleva, Aleksandra, Zhizhin, Evgeniy

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Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios von Shapenkov, Sevastian, Vyvenko, Oleg, Nikolaev, Vladimir, Stepanov, Sergei, Pechnikov, Alexei, Scheglov, Mikhail, Varygin, Georgiy

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Polymorphism and Faceting in Ga 2 O 3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios von Shapenkov, Sevastian, Vyvenko, Oleg, Nikolaev, Vladimir, Stepanov, Sergei, Pechnikov, Alexei, Scheglov, Mikhail, Varygin, Georgiy

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Polymorphism and Faceting in Ga 2 O 3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios von Shapenkov, Sevastian, Vyvenko, Oleg, Nikolaev, Vladimir, Stepanov, Sergei, Pechnikov, Alexei, Scheglov, Mikhail, Varygin, Georgiy

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Halide Vapor Phase Epitaxy α‐ and ε‐Ga2O3 Epitaxial Films Grown on Patterned Sapphire Substrates von Shapenkov, Sevastian, Vyvenko, Oleg, Ubyivovk, Evgeny, Medvedev, Oleg, Varygin, Georgiy, Chikiryaka, Andrey, Pechnikov, Alexei, Scheglov, Mikhail, Stepanov, Sergei, Nikolaev, Vladimir

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Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers von Polyakov, Alexander, Nikolaev, Vladimir, Stepanov, Sergey, Almaev, Alexei, Pechnikov, Alexei, Yakimov, Eugene, Kushnarev, Bogdan O, Shchemerov, Ivan, Scheglov, Mikhail, Chernykh, Alexey, Vasilev, Anton, Kochkova, Anastasia, Guzilova, Lyubov, Pearton, Stephen J

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High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3 von Almaev, Aleksei, Tsymbalov, Alexander, Kushnarev, Bogdan, Nikolaev, Vladimir, Pechnikov, Alexei, Scheglov, Mikhail, Chikiryaka, Andrei, Korusenko, Petr

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Self-powered UVC detectors based on α-Ga2O3 with enchanted speed performance von Almaev, Aleksei, Tsymbalov, Alexander, Kushnarev, Bogdan, Nikolaev, Vladimir, Pechnikov, Alexei, Scheglov, Mikhail, Chikiryaka, Andrei

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Self-powered UVC detectors based on α-Ga 2 O 3 with enchanted speed performance von Almaev, Aleksei, Tsymbalov, Alexander, Kushnarev, Bogdan, Nikolaev, Vladimir, Pechnikov, Alexei, Scheglov, Mikhail, Chikiryaka, Andrei

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High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga 2 O 3 von Almaev, Aleksei, Tsymbalov, Alexander, Kushnarev, Bogdan, Nikolaev, Vladimir, Pechnikov, Alexei, Scheglov, Mikhail, Chikiryaka, Andrei, Korusenko, Petr

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Effects of sapphire substrate orientation on Sn-doped α-Ga 2 O 3 grown by halide vapor phase epitaxy using α-Cr 2 O 3 buffers von Polyakov, Alexander, Nikolaev, Vladimir, Stepanov, Sergey, Almaev, Alexei, Pechnikov, Alexei, Yakimov, Eugene, Kushnarev, Bogdan O, Shchemerov, Ivan, Scheglov, Mikhail, Chernykh, Alexey, Vasilev, Anton, Kochkova, Anastasia, Guzilova, Lyubov, Pearton, Stephen J

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Halide Vapor Phase Epitaxy of In 2 O 3 and (In 1− x Ga x ) 2 O 3 on Sapphire Substrates and GaN/Al 2 O 3 Templates von Stepanov, Sergey, Nikolaev, Vladimir, Pechnikov, Alexei, Scheglov, Mikhail, Chikiryaka, Andrei, Chernykh, Alexey, Odnobludov, Maxim, Andreeva, Valentina, Polyakov, Alexander Y.

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Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers von Polyakov, Alexander, Nikolaev, Vladimir, Stepanov, Sergey, Almaev, Alexei, Pechnikov, Alexei, Yakimov, Eugene, Kushnarev, Bogdan O., Shchemerov, Ivan, Scheglov, Mikhail, Chernykh, Alexey, Vasilev, Anton, Kochkova, Anastasia, Pearton, Stephen J.

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Halide Vapor Phase Epitaxy α‐ and ε‐Ga 2 O 3 Epitaxial Films Grown on Patterned Sapphire Substrates von Shapenkov, Sevastian, Vyvenko, Oleg, Ubyivovk, Evgeny, Medvedev, Oleg, Varygin, Georgiy, Chikiryaka, Andrey, Pechnikov, Alexei, Scheglov, Mikhail, Stepanov, Sergei, Nikolaev, Vladimir

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