Flexible graphene-based chemical sensors on paper substrates von GWANGSEOK YANG, LEE, Chongmin, KIM, Jihyun, FAN REN, PEARTON, Stephen J

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Radiation damage effects in Ga2O3 materials and devices von Kim, Jihyun, Pearton, Stephen J, Fares, Chaker, Yang, Jiancheng, Ren, Fan, Kim, Suhyun, Polyakov, Alexander Y

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Artificial Neuron and Synapse Devices Based on 2D Materials von Lee, Geonyeop, Baek, Ji‐Hwan, Ren, Fan, Pearton, Stephen J., Lee, Gwan‐Hyoung, Kim, Jihyun

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AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer von Baik, Kwang Hyeon, Jung, Sunwoo, Cho, Chu-Young, Park, Kyung-Ho, Ren, Fan, Pearton, Stephen. J., Jang, Soohwan

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Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage >8 kV von Li, Jian-Sian, Wan, Hsiao-Hsuan, Chiang, Chao-Ching, Xia, Xinyi, Yoo, Timothy, Kim, Honggyu, Ren, Fan, Pearton, Stephen

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Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact von Chiang, Chao-Ching, Li, Jian-Sian, Wan, Hsiao-Hsuan, Ren, Fan, Pearton, Stephen J.

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Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions von Polyakov, Alexander Y., Saranin, Danila S., Shchemerov, Ivan V., Vasilev, Anton A., Romanov, Andrei A., Kochkova, Anastasiia I., Gostischev, Pavel, Chernykh, Alexey V., Alexanyan, Luiza A., Matros, Nikolay R., Lagov, Petr B., Doroshkevich, Aleksandr S., Isayev, Rafael Sh, Pavlov, Yu. S., Kislyuk, Alexander M., Yakimov, Eugene B., Pearton, Stephen J.

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Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications von Ren, Fan, Pearton, Stephen J

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Influence of High-Energy Proton Irradiation on β‑Ga2O3 Nanobelt Field-Effect Transistors von Yang, Gwangseok, Jang, Soohwan, Ren, Fan, Pearton, Stephen J, Kim, Jihyun

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Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers von Wan, Hsiao-Hsuan, Chiang, Chao-Ching, Li, Jian-Sian, Labed, Madani, Park, Jang Hyeok, Rim, You Seung, Ren, Fan, Pearton, Stephen J.

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EBIC studies of minority electron diffusion length in undoped p-type gallium oxide von Chernyak, Leonid, Lovo, Seth, Li, Jian-Sian, Chiang, Chao-Ching, Ren, Fan, Pearton, Stephen J., Sartel, Corinne, Chi, Zeyu, Dumont, Yves, Chikoidze, Ekaterine, Schulte, Alfons, Ruzin, Arie, Shimanovich, Ulyana

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Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy von Yakimov, Eugene B., Polyakov, Alexander Y., Nikolaev, Vladimir I., Pechnikov, Alexei I., Scheglov, Mikhail P., Yakimov, Eugene E., Pearton, Stephen J.

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The Promise and Perils of Wide-Bandgap Semiconductor Nanowires for Sensing, Electronic, and Photonic Applications von Pearton, Stephen J., Norton, David P., Ren, Fan

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NiO/Ga2O3 Vertical Rectifiers of 7 kV and 1 mm2 with 5.5 A Forward Conduction Current von Li, Jian-Sian, Wan, Hsiao-Hsuan, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Ren, Fan, Kim, Honggyu, Pearton, Stephen J.

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The Optimization of NiO Doping, Thickness, and Extension in kV-Class NiO/Ga2O3 Vertical Rectifiers von Chiang, Chao-Ching, Li, Jian-Sian, Wan, Hsiao-Hsuan, Ren, Fan, Pearton, Stephen J.

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Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors von Carey, Patrick H., Pearton, Stephen J., Ren, Fan, Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Kaplar, Robert J., Kotula, Paul G.

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Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga2O3 von Modak, Sushrut, Chernyak, Leonid, Schulte, Alfons, Xian, Minghan, Ren, Fan, Pearton, Stephen J., Ruzin, Arie, Kosolobov, Sergey S., Drachev, Vladimir P.

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Cathodoluminescence studies of electron injection effects in p-type gallium oxide von Chernyak, Leonid, Schulte, Alfons, Li, Jian-Sian, Chiang, Chao-Ching, Ren, Fan, Pearton, Stephen J., Sartel, Corinne, Sallet, Vincent, Chi, Zeyu, Dumont, Yves, Chikoidze, Ekaterine, Ruzin, Arie

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Annealing Stability of NiO/Ga2O3 Vertical Heterojunction Rectifiers von Li, Jian-Sian, Wan, Hsiao-Hsuan, Chiang, Chao-Ching, Ren, Fan, Pearton, Stephen J.

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Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching von Kwon, Yongbeom, Lee, Geonyeop, Oh, Sooyeoun, Kim, Jihyun, Pearton, Stephen J., Ren, Fan

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