Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS von Pearton, S. J., Ren, Fan, Tadjer, Marko, Kim, Jihyun

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Hydrogen Sensing Using Pd-Functionalized Multi-Layer Graphene Nanoribbon Networks von Johnson, Jason L., Behnam, Ashkan, Pearton, S. J., Ural, Ant

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Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers von Li, Jian-Sian, Chiang, Chao-Ching, Xia, Xinyi, Yoo, Timothy Jinsoo, Ren, Fan, Kim, Honggyu, Pearton, S. J.

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Recent progress in processing and properties of ZnO von PEARTON, S. J, NORTON, D. P, IP, K, HEO, Y. W, STEINER, T

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Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Yang, Jiancheng, Ren, F., Yang, Gwangseok, Kim, Jihyun, Kuramata, A., Pearton, S. J.

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Annealing temperature dependence of band alignment of NiO/β-Ga2O3 von Xia, Xinyi, Li, Jian-Sian, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Ren, Fan, Kim, Honggyu, Pearton, S J

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Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors von Ahn, Shihyun, Ren, Fan, Kim, Janghyuk, Oh, Sooyeoun, Kim, Jihyun, Mastro, Michael A., Pearton, S. J.

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Electrical properties of bulk semi-insulating β-Ga2O3 (Fe) von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Pearton, S. J., Ren, Fan, Chernykh, A. V., Kochkova, A. I.

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Radiation effects in GaN materials and devices von Polyakov, Alexander Y., Pearton, S. J., Frenzer, Patrick, Ren, Fan, Liu, Lu, Kim, Jihyun

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Recent advances in wide bandgap semiconductor biological and gas sensors von Pearton, S.J., Ren, F., Wang, Yu-Lin, Chu, B.H., Chen, K.H., Chang, C.Y., Lim, Wantae, Lin, Jenshan, Norton, D.P.

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ZnO nanowire growth and devices von Heo, Y.W., Norton, D.P., Tien, L.C., Kwon, Y., Kang, B.S., Ren, F., Pearton, S.J., LaRoche, J.R.

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GaN-based diodes and transistors for chemical, gas, biological and pressure sensing von Pearton, S J, Kang, B S, Kim, Suku, Ren, F, Gila, B P, Abernathy, C R, Lin, Jenshan, Chu, S N G

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Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Pearton, S. J., Fares, Chaker, Yang, Jiancheng, Ren, Fan, Kim, Jihyun, Lagov, P. B., Stolbunov, V. S., Kochkova, A.

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Dilute magnetic semiconducting oxides von Pearton, S J, Heo, W H, Ivill, M, Norton, D P, Steiner, T

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Radiation Effects in GaN-Based High Electron Mobility Transistors von Pearton, S. J., Hwang, Ya-Shi, Ren, F.

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A review of Ga2O3 materials, processing, and devices von Pearton, S. J., Yang, Jiancheng, Cary, Patrick H., Ren, F., Kim, Jihyun, Tadjer, Marko J., Mastro, Michael A.

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Experimental estimation of electron–hole pair creation energy in β-Ga2O3 von Yakimov, E. B., Polyakov, A. Y., Shchemerov, I. V., Smirnov, N. B., Vasilev, A. A., Vergeles, P. S., Yakimov, E. E., Chernykh, A. V., Ren, F., Pearton, S. J.

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Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga2O3: effects of carrier trapping with deep centers von Polyakov, A Y, Yakimov, E B, Shchemerov, I V, Vasilev, A A, Kochkova, A I, Nikolaev, V I, Pearton, S J

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High Breakdown Voltage (−201) \beta -Ga2O3 Schottky Rectifiers von Jiancheng Yang, Shihyun Ahn, Ren, F., Pearton, S. J., Soohwan Jang, Kuramata, A.

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Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes von Yang, Jiancheng, Ahn, Shihyun, Ren, F., Khanna, Rohit, Bevlin, Kristen, Geerpuram, Dwarakanath, Pearton, S. J., Kuramata, A.

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