Formation of multiple quantum wires by strain-induced lateral-layer ordering process von Pearah, P.J., Chen, A.C., Moy, A.M., Hsieh, K.C., Cheng, K.Y.

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AlGaInP multiple quantum wire heterostructure lasers prepared by the strain-induced lateral-layer ordering process von Pearah, P.J., Chen, A.C., Moy, A.M., Kuang-Chien Hsieh, Keh-Yung Cheng

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Interface shape and crystallinity in LEC GaAs von Tower, J.P., Tobin, R., Pearah, P.J., Ware, R.M.

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Strained AlGaInP quantum wire lasers von Pearah, P.J., Chen, A.C., Moy, A.M., Hsieh, K.C., Cheng, K.Y.

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Strained AlGaInP Multiple Quantum Wire Lasers Grown By Gas Source Molecular Beam Epitaxy von Pearah, P.J., Chen, A.C., Moy, A.M., Stellini, E.M., Hsieh, K.C., Cheng, K.Y.

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Growth of silicon and beryllium doped InP by MBE using solid phosphorus von Baillargeon, J.N., Cho, A.Y., Fischer, R.J., Pearah, P.J., Cheng, K.Y.

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