Intrinsic and oxygen-related deep level defects in In 0.5(Al xGa 1− x) 0.5P grown by metal-organic vapor phase epitaxy von Cederberg, J.G., Bieg, B., Huang, J.-W., Stockman, S.A., Peanasky, M.J., Kuech, T.F.

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Intrinsic and oxygen-related deep level defects in In0.5(AlxGa1-x)0.5P grown by metal-organic vapor phase epitaxy von CEDERBERG, J. G, BIEG, B, HUANG, J.-W, STOCKMAN, S. A, PEANASKY, M. J, KUECH, T. F

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Effect of pressure on the height of the Schottky barrier (Φ) for several semiconductors von PEANASKY, M. J, DRICKAMER, H. G

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The effect of pressure on the optical absorption edge of sulfur to 300 kbar von PEANASKY, M. J, JURGENSEN, C. W, DRICKAMER, H. G

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Hydrostatic pressure measurements ( 12 kbar) on single- and multiple-stripe quantum-well heterostructure laser diodes von EPLER, J. E, KALISKI, R. W, HOLONYAK, N. JR, PEANASKY, M. J, HERRMANNSFELDT, G. A, DRICKAMER, H. G, BURNHAM, R. D, THORNTON, R. L

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High Performance AlGaInP Light-emitting Diodes von Kuo, C.P., Fletcher, R.M., Yu, J.G., Osentowski, T.D., Steigerwald, D.A., DeFevere, D.C., Peanasky, M.J., Kish, F.A.

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