Equipment for growing semiconductor heterostructures in outer space von Blinov, V. V., Vladimirov, V. M., Kulinich, S. N., Nikiforov, A. I., Pridachin, D. N., Pchelyakov, D. O., Pchelyakov, O. P., Sokolov, L. V., Yarockiy, D. V.

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Growing semiconductor structures for high-performance solar cells in open space von Blinov, V. V., Vladimirov, V. M., Kushnarev, N. A., Nikiforov, A. I., Pridachin, D. B., Pchelyakov, D. O., Pchelyakov, O. P., Skorodelov, V. A., L. V., Sokolov

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PLANT FOR MOLECULAR BEAM EPITAXY «KATUN-100 von Blinov, V. V., Mashanov, V. I., Nikiforov, A. I., Pridachin, D. N., Pchelyakov, D. O., Pchelyakov, O. P., Sokolov, L. V., Titov, V. P.

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Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell von Legan, D. M., Pchelyakov, O. P., Preobrazhenskii, V. V.

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Optimization of the In.sub.0.3Ga.sub.0.7As-Layer Thickness in a Triple-Junction In.sub.0.3Ga.sub.0.7As/GaAs/In.sub.0.5Ga.sub.0.5P Solar Cell von Legan, D. M, Pchelyakov, O. P, Preobrazhenskii, V. V

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Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands von Esin, M. Yu, Nikiforov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Mashanov, V. I., Loshkarev, I. D., Deryabin, A. S., Pchelyakov, O. P.

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Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands von Yesin, M. Yu, Nikiforov, A. I., Timofeev, V. A., Mashanov, V. I., Tuktamyshev, A. R., Loshkarev, I. D., Pchelyakov, O. P.

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Molecular Beam Epitaxy of Germanium on Si(001) for Photodetectors in the Spectral Range from 1.31 to 1.55 m von Fritzler, K. B., Deryabin, A. S., Loshkarev, I. D., Nikiforov, A. I., Chistokhin, I. B., Kolesnikov, A. V., Vasilenko, A. P., Pchelyakov, O. P., Sokolov, L. V., Pevchikh, K. E., Svetikov, V. V., Gutakovskii, A. K.

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Plastic relaxation anisotropy in epitaxial films grown on miscut Si(001) substrates von Ilin, A. S., Trukhanov, E. M., Kolesnikov, A. V., Loshkarev, I. D., Pchelyakov, O. P.

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Ge/Si Quantum Dots Superlattices Grown at Different Temperatures and Characterized by Raman Spectroscopy and Capacitance Measurements von Zahn, Dietrich R. T., Galzerani, J. C., Rodrigues, A. D., Pchelyakov, O. P., Ulyanov, V. V., Nikiforov, A. I., Chiquito, A. J., Zanelatto, G., Milekhin, Alexander

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Size-selective Raman scattering in self-assembled Ge/Si quantum dot superlattices von Milekhin, A G, Nikiforov, A I, Pchelyakov, O P, Schulze, S, Zahn, D R T

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Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates von Loshkarev, I. D., Vasilenko, A. P., Trukhanov, E. M., Kolesnikov, A. V., Putyato, M. A., Semyagin, B. R., Preobrazhenskii, V. V., Pchelyakov, O. P.

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Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications von Pchelyakov, O. P., Dvurechenskii, A. V., Nikiforov, A. I., Voitsekhovskii, A. V., Grigor’ev, D. V., Kokhanenko, A. P.

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InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates von Emel’yanov, Е. А., Kokhanenko, А. P., Abramkin, D. S., Pchelyakov, O. P., Putyato, М. А., Semyagin, B. R., Preobrazhenskii, V. V., Vasilenko, A. P., Feklin, D. F., Niu, Zhicuan, Ni, Haiqiao

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Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates von Emelyanov, E. A., Kokhanenko, A. P., Pchelyakov, O. P., Loshkarev, I. D., Seleznev, V. A., Putyato, M. A., Semyagin, B. R., Preobrazhenskii, V. V., Niu, Zhicuan, Ni, Haiqiao

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Phonons in Ge/Si quantum dot structures: influence of growth temperature von Milekhin, A.G, Nikiforov, A.I, Ladanov, M.Yu, Pchelyakov, O.P, Lobanov, D.N, Novikov, A.V, Krasil'nik, Z.F, Schulze, S, Zahn, D.R.T

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InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source von Putyato, M.A, Preobrazhenskii, V.V, Semyagin, B.R, Bolkhovityanov, Yu.B, Gilinsky, A.M, Gutakousky, A.K, Revenko, M.A, Pchelyakov, O.P, Feklin, D.F

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Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates von Emelyanov, E. A., Feklin, D. F., Putyato, M. A., Semyagin, B. R., Gutakovskii, A. K., Seleznev, V. A., Vasilenko, A. P., Abramkin, D. S., Pchelyakov, O. P., Preobrazhenskii, V. V., Zhicuan, N., Haiqiao, N.

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Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy von Emel’yanov, E. A., Feklin, D. F., Vasev, A. V., Putyato, M. A., Semyagin, B. R., Vasilenko, A. P., Pchelyakov, O. P., Preobrazhenskii, V. V.

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Two-band conduction in TiO2 von Gritsenko, D. V., Shaĭmeev, S. S., Atuchin, V. V., Grigor’eva, T. I., Pokrovskiĭ, L. D., Pchelyakov, O. P., Gritsenko, V. A., Aseev, A. L., Lifshits, V. G.

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