Assessment and Improvement of the Pattern Recognition Performance of Memdiode-Based Cross-Point Arrays with Randomly Distributed Stuck-at-Faults von Aguirre, Fernando L., Pazos, Sebastián M., Palumbo, Félix, Morell, Antoni, Suñé, Jordi, Miranda, Enrique

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Self‐configuration system and frequency characterization of a programmable photodetector ASIC von Calarco, Nicolás, Córdoba, Matías, Mombello, Lucas, Gak, Joel, Lorenzatto, Martín, Pazos, Sebastián, Lipovetzky, José, Perez Quintián, Fernando

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SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model von Aguirre, Fernando L., Pazos, Sebastián M., Palumbo, Félix, Suñé, Jordi, Miranda, Enrique

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The OLGA-OLGIM staging and the interobserver agreement for gastritis and preneoplastic lesion screening: a cross-sectional study von Salazar, Beatriz E., Pérez-Cala, Tania, Gomez-Villegas, Sara Isabel, Cardona-Zapata, Laura, Pazos-Bastidas, Sebastián, Cardona-Estepa, Alejandra, Vélez-Gómez, Diego Enrique, Justinico-Castro, José Armando, Bernal-Cobo, Andrés, Dávila-Giraldo, Harold Adrián, Benítez-Guerra, Juan Carlos, Valencia-Cárdenas, Joaquín Tiberio, Ospina, Edgar de Jesús, Castaño-Llano, Rodrigo, Bravo, María Mercedes, Cataño-Correa, Juan Carlos, Zabaleta, Jovanny, Trespalacios-Rangel, Alba Alicia, Cock-Botero, Ana María, Roldán-Pérez, Miguel Ignacio, Martínez, Alonso

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A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics von Palumbo, Felix, Wen, Chao, Lombardo, Salvatore, Pazos, Sebastian, Aguirre, Fernando, Eizenberg, Moshe, Hui, Fei, Lanza, Mario

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Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides von Aguirre, Fernando Leonel, Rodriguez-Fernandez, Alberto, Pazos, Sebastian Matias, Sune, Jordi, Miranda, Enrique, Palumbo, Felix

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Hardware implementation of memristor-based artificial neural networks von Aguirre, Fernando, Sebastian, Abu, Le Gallo, Manuel, Song, Wenhao, Wang, Tong, Yang, J. Joshua, Lu, Wei, Chang, Meng-Fan, Ielmini, Daniele, Yang, Yuchao, Mehonic, Adnan, Kenyon, Anthony, Villena, Marco A., Roldán, Juan B., Wu, Yuting, Hsu, Hung-Hsi, Raghavan, Nagarajan, Suñé, Jordi, Miranda, Enrique, Eltawil, Ahmed, Setti, Gianluca, Smagulova, Kamilya, Salama, Khaled N., Krestinskaya, Olga, Yan, Xiaobing, Ang, Kah-Wee, Jain, Samarth, Li, Sifan, Alharbi, Osamah, Pazos, Sebastian, Lanza, Mario

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High-performance van der Waals antiferroelectric CuCrP2S6-based memristors von Ma, Yinchang, Yan, Yuan, Luo, Linqu, Pazos, Sebastian, Zhang, Chenhui, Lv, Xiang, Chen, Maolin, Liu, Chen, Wang, Yizhou, Chen, Aitian, Li, Yan, Zheng, Dongxing, Lin, Rongyu, Algaidi, Hanin, Sun, Minglei, Liu, Jefferson Zhe, Tu, Shaobo, Alshareef, Husam N., Gong, Cheng, Lanza, Mario, Xue, Fei, Zhang, Xixiang

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Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects von Aguirre, Fernando Leonel, Ranjan, Alok, Raghavan, Nagarajan, Padovani, Andrea, Pazos, Sebastián Matías, Vega, Nahuel, Müller, Nahuel, Debray, Mario, Molina-Reyes, Joel, Pey, Kin Leong, Palumbo, Félix

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Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition von Aguirre, Fernando Leonel, Gomez, Nicolás M., Pazos, Sebastián Matías, Palumbo, Félix, Suñé, Jordi, Miranda, Enrique

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7D High‐Dynamic Spin‐Multiplexing von Qin, Yue, Guo, Hao, Pazos, Sebastian, Xu, Mengzhen, Yan, Xiaobing, Qiao, Jianzhong, Wang, Jia, Zhou, Peng, Chai, Yang, Hu, Weida, Zhu, Zhengqiang, Li, Zhonghao, Wen, Huanfei, Ma, Zongmin, Li, Xin, Lanza, Mario, Tang, Jun, Tian, He, Liu, Jun

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Roadmap to neuromorphic computing with emerging technologies von Mehonic, Adnan, Ielmini, Daniele, Roy, Kaushik, Mutlu, Onur, Kvatinsky, Shahar, Serrano-Gotarredona, Teresa, Linares-Barranco, Bernabe, Spiga, Sabina, Savel’ev, Sergey, Balanov, Alexander G., Chawla, Nitin, Desoli, Giuseppe, Malavena, Gerardo, Monzio Compagnoni, Christian, Wang, Zhongrui, Yang, J. Joshua, Sarwat, Syed Ghazi, Sebastian, Abu, Mikolajick, Thomas, Slesazeck, Stefan, Noheda, Beatriz, Dieny, Bernard, Hou, Tuo-Hung (Alex), Varri, Akhil, Brückerhoff-Plückelmann, Frank, Pernice, Wolfram, Zhang, Xixiang, Pazos, Sebastian, Lanza, Mario, Wiefels, Stefan, Dittmann, Regina, Ng, Wing H., Buckwell, Mark, Cox, Horatio R. J., Mannion, Daniel J., Kenyon, Anthony J., Lu, Yingming, Yang, Yuchao, Querlioz, Damien, Hutin, Louis, Vianello, Elisa, Chowdhury, Sayeed Shafayet, Mannocci, Piergiulio, Cai, Yimao, Sun, Zhong, Pedretti, Giacomo, Strachan, John Paul, Strukov, Dmitri, Le Gallo, Manuel, Ambrogio, Stefano, Valov, Ilia, Waser, Rainer

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Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition von Aguirre, Fernando Leonel, Pazos, Sebastian Matias, Palumbo, Felix, Sune, Jordi, Miranda, Enrique

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Analytic circuit model for thermal drying behavior of electronic inks von Maroli, Gabriel, Boyeras, Santiago, Giannetta, Hernan, Pazos, Sebastian, Gak, Joel, Oliva, Alejandro Raúl, Volpe, María Alicia, Julian, Pedro Marcelo, Palumbo, Felix

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All-2D materials-based 1T1M cells with threshold switching for electronic neurons von Yuan, Bin, Zhu, Kaichen, Han, Tingting, Pazos, Sebastian, Lanza, Mario

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Hybrid 2D–CMOS microchips for memristive applications von Zhu, Kaichen, Pazos, Sebastian, Aguirre, Fernando, Shen, Yaqing, Yuan, Yue, Zheng, Wenwen, Alharbi, Osamah, Villena, Marco A., Fang, Bin, Li, Xinyi, Milozzi, Alessandro, Farronato, Matteo, Muñoz-Rojo, Miguel, Wang, Tao, Li, Ren, Fariborzi, Hossein, Roldan, Juan B., Benstetter, Guenther, Zhang, Xixiang, Alshareef, Husam N., Grasser, Tibor, Wu, Huaqiang, Ielmini, Daniele, Lanza, Mario

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Integration of Ag-based threshold switching devices in silicon microchips von Alharbi, Osamah, Pazos, Sebastian, Zhu, Kaichen, Aguirre, Fernando, Yuan, Yue, Li, Xinyi, Wu, Huaqiang, Lanza, Mario

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Standards for the Characterization of Endurance in Resistive Switching Devices von Lanza, Mario, Waser, Rainer, Ielmini, Daniele, Yang, J. Joshua, Goux, Ludovic, Suñe, Jordi, Kenyon, Anthony Joseph, Mehonic, Adnan, Spiga, Sabina, Rana, Vikas, Wiefels, Stefan, Menzel, Stephan, Valov, Ilia, Villena, Marco A, Miranda, Enrique, Jing, Xu, Campabadal, Francesca, Gonzalez, Mireia B, Aguirre, Fernando, Palumbo, Felix, Zhu, Kaichen, Roldan, Juan Bautista, Puglisi, Francesco Maria, Larcher, Luca, Hou, Tuo-Hung, Prodromakis, Themis, Yang, Yuchao, Huang, Peng, Wan, Tianqing, Chai, Yang, Pey, Kin Leong, Raghavan, Nagarajan, Dueñas, Salvador, Wang, Tao, Xia, Qiangfei, Pazos, Sebastian

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High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors von Pazos, Sebastian, Becker, Thales, Villena, Marco Antonio, Zheng, Wenwen, Shen, Yaqing, Yuan, Yue, Alharbi, Osamah, Zhu, Kaichen, Roldán, Juan Bautista, Wirth, Gilson, Palumbo, Felix, Lanza, Mario

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Fully 2D Materials‐Based Resistive Switching Circuits for Advanced Data Encryption von Han, Tingting, Aguirre, Fernando, Zhu, Kaichen, Yuan, Bin, Pazos, Sebastian, Zhang, Nan, Wang, Sui‐Dong, Li, Shaojuan, Lanza, Mario

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