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Radiation-induced structural transformations in a silicon layer of SOI von Shcherbachev, K. D., Bublik, V. T., Mordkovich, V. N., Pazhin, D. M., Alves, E., Barradas, N. P.

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Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures von Shcherbachev, K. D., Bublik, V. T., Mordkovich, V. N., Pazhin, D. M.

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The features of magnetosensitive sensors based on a field-effect hall probe von Baranochnikov, M. L., Leonov, A. V., Mordkovich, V. N., Pazhin, D. M.

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Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation von Shcherbachev, K. D., Voronova, M. I., Bublik, V. T., Mordkovich, V. N., Pazhin, D. M., Zinenko, V. I., Agafonov, Yu. A.

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The effect of in situ photoexcitation on the generation of damaged structures during ion implantation into Si wafers von SHCHERBACHEV, K. D, BUBLIK, V. T, MORDKOVICH, V. N, PAZHIN, D. M

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Radiation-induced structural transformations in a silicon layer of SOI von SHCHERBACHEV, K. D, BUBLIK, V. T, MORDKOVICH, V. N, PAZHIN, D. M, ALVES, E, BARRADAS, N. P

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Viktor Konstantinovich Voĭtovetskiĭ (Obituary) von Aleksandrov, A P, Belyaev, S T, Gaponov, Yurii V, Grechukhin, D P, Gurevich, I I, Kagan, Yurii M, Kikoin, I K, Korsunskiĭ, I L, Pazhin, Yu F, Chernoplekov, Nikolai A

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