Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing von Kachurin, G.A., Tyschenko, I.E., Zhuravlev, K.S., Pazdnikov, N.A., Volodin, V.A., Gutakovsky, A.K., Leier, A.F., Skorupa, W., Yankov, R.A.

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Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating von Kachurin, G.A., Zhuravlev, K.S., Pazdnikov, N.A., Leier, A.F., Tyschenko, I.E., Volodin, V.A., Skorupa, W., Yankov, R.A.

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Annealing effects in light-emitting Si nanostructures formed in SiO 2 by ion implantation and transient preheating von Kachurin, G.A., Zhuravlev, K.S., Pazdnikov, N.A., Leier, A.F., Tyschenko, I.E., Volodin, V.A., Skorupa, W., Yankov, R.A.

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Silicon nanocluster in silicon nitride: photoluminescence, Raman scattering and ESR studies von Gritsenko, V.A., Milov, A.D., Efremov, M.D., Volodin, V.A., Wong, H., Pazdnikov, N.A., Zhuravlev, K.S.

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