Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing von Kachurin, G.A., Tyschenko, I.E., Zhuravlev, K.S., Pazdnikov, N.A., Volodin, V.A., Gutakovsky, A.K., Leier, A.F., Skorupa, W., Yankov, R.A.

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Annealing effects in light-emitting Si nanostructures formed in SiO 2 by ion implantation and transient preheating von Kachurin, G.A., Zhuravlev, K.S., Pazdnikov, N.A., Leier, A.F., Tyschenko, I.E., Volodin, V.A., Skorupa, W., Yankov, R.A.

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Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating von Kachurin, G.A., Zhuravlev, K.S., Pazdnikov, N.A., Leier, A.F., Tyschenko, I.E., Volodin, V.A., Skorupa, W., Yankov, R.A.

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Silicon nanocluster in silicon nitride: photoluminescence, Raman scattering and ESR studies von Gritsenko, V.A., Milov, A.D., Efremov, M.D., Volodin, V.A., Wong, H., Pazdnikov, N.A., Zhuravlev, K.S.

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Microstructure and mechanical properties of V–4Ti–4Cr alloy as a function of the chemical heat treatment regimes von Potapenko, M. M., Chernov, V. M., Drobyshev, V. A., Kravtsova, M. V., Kudryavtseva, I. E., Degtyarev, N. A., Ovchinnikov, S. V., Tyumentsev, A. N., Ditenberg, I. A., Pinzhin, Yu. P., Korotaev, A. D.

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Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix von Volodin, V. A., Gambaryan, M. P., Cherkov, A. G., Vdovin, V. I., Stoffel, M., Rinnert, H., Vergnat, M.

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