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    Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress

    Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress von Paxinos, Kosta, Antoniou, Giorgos, Afouxenidis, Dimitrios, Mohamed, Ahmed, Dikko, Umar, Tsitsimpelis, Ioannis, Milne, William I., Nathan, Arokia, Adamopoulos, George

    Veröffentlicht in Applied physics letters

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