Wideband Slotline-to-Microstrip Transition for 210-375 GHz Based on Marchand Baluns von Lopez, Cristian Daniel, Mebarki, Mohamed Aniss, Desmaris, Vincent, Meledin, Denis, Pavolotsky, Alexey B., Belitsky, Victor

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Waveguide-to-microstrip transition with integrated bias-T von Risacher, C., Vassilev, V., Pavolotsky, A., Belitsky, V.

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A Nonlinear Transmission Line Model for Simulating Distributed SIS Frequency Multipliers von Garrett, John D., Rashid, Hawal, Yassin, Ghassan, Desmaris, Vincent, Pavolotsky, Alexey B., Belitsky, Victor

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Vacuum-Seal Waveguide Feedthrough for Extended W-Band 67-116 GHz von Lapkin, Igor, Lopez, Cristian, Fredrixon, Mathias, Pavolotsky, Alexey, Ferm, Sven-Erik, Desmaris, Vincent, Belitsky, Victor

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XPS study of multilayer multicomponent films von Lubenchenko, Alexander V., Batrakov, Alexander A., Pavolotsky, Alexey B., Lubenchenko, Olga I., Ivanov, Dmitriy A.

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Superconducting 4-8-GHz Hybrid Assembly for 2SB Cryogenic THz Receivers von Rashid, Hawal, Meledin, Denis, Desmaris, Vincent, Pavolotsky, Alexey, Belitsky, Victor

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Specific Capacitance Dependence on the Specific Resistance in Nb/Al–AlOx/Nb Tunnel Junctions von Aghdam, Parisa Yadranjee, Rashid, Hawal, Pavolotsky, Alexey, Desmaris, Vincent, Meledin, Denis, Belitsky, Victor

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Performance of the First ALMA Band 5 Production Cartridge von Billade, B., Nystrom, O., Meledin, D., Sundin, E., Lapkin, I., Fredrixon, M., Desmaris, V., Rashid, H., Strandberg, M., Ferm, S., Pavolotsky, A., Belitsky, V.

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GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications von Mebarki, Mohamed Aniss, Ferrand-Drake Del Castillo, Ragnar, Pavolotsky, Alexey, Meledin, Denis, Sundin, Erik, Thorsell, Mattias, Rorsman, Niklas, Belitsky, Victor, Desmaris, Vincent

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Wideband OMT for the 210-373 GHz Band With Built-in 90° Waveguide Twist von Lapkin, Igor, Lopez, Cristian, Meledin, Denis, Helldner, Leif, Fredrixon, Mathias, Pavolotsky, Alexey, Ferm, SvenErik, Desmaris, Vincent, Belitsky, Victor

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Millimeter-Wave Wideband Waveguide Power Divider With Improved Isolation Between Output Ports von Gouda, Ahmed, Lopez, Cristian, Desmaris, Vincent, Meledin, Denis, Pavolotsky, Alexey, Belitsky, Victor

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Waveguide-to-Substrate Transition Based on Unilateral Substrateless Finline Structure: Design, Fabrication, and Characterization von Lopez, Cristian, Desmaris, Vincent, Meledin, Denis, Pavolotsky, Alexey, Belitsky, Victor

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Noise and IF Gain Bandwidth of a Balanced Waveguide NbN/GaN Hot Electron Bolometer Mixer Operating at 1.3 THz von Krause, Sascha, Meledin, Denis, Desmaris, Vincent, Pavolotsky, Alexey, Rashid, Hawal, Belitsky, Victor

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THz Frequency Up-Conversion using Superconducting Tunnel Junction von Rashid, Hawal, Desmaris, Vincent, Pavolotsky, Alexey, Belitsky, Victor

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Dependence of the scatter of the electrical properties on local non-uniformities of the tunnel barrier in Nb/Al-AlOx/Nb junctions von Yadranjee Aghdam, Parisa, Rashid, Hawal Marouf, Pavolotsky, Alexey, Desmaris, Vincent, Belitsky, Victor

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Dependence of the scatter of the electrical properties on localnon-uniformities of the tunnel barrier in Nb/Al-AlOx/Nbjunctions von Yadranjee Aghdam Parisa, Rashid Hawal Marouf, Pavolotsky Alexey, Desmaris Vincent, Belitsky, Victor

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Aging- and annealing-induced variations in Nb/Al–AlOx/Nb tunnel junction properties von Pavolotsky, Alexey B., Dochev, Dimitar, Belitsky, Victor

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Frequency Multiplier Based on Distributed Superconducting Tunnel Junctions: Theory, Design, and Characterization von Rashid, Hawal, Krause, Sascha, Meledin, Denis, Desmaris, Vincent, Pavolotsky, Alexey, Belitsky, Victor

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Direct Measurement of Superconducting Tunnel Junction Capacitance von Aghdam, Parisa Yadranjee, Rashid, Hawal, Pavolotsky, Alexey, Desmaris, Vincent, Meledin, Denis, Belitsky, Victor

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Experimental Study of Frequency Multiplication in a Distributed Array of SIS Junctions von Billade, Bhushan, Pavolotsky, Alexey, Belitsky, Victor

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