Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys von Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E.-M., Kudrawiec, R., Wang, Y. Q., Goldman, R. S.

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Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys von Pavelescu, E.-M., Ligor, O., Occena, J., Ticoş, C., Matei, A., Gavrilă, R. L., Yamane, K., Wakahara, A., Goldman, R. S.

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Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure von Dybała, F., Kopaczek, J., Gladysiewicz, M., Pavelescu, E.-M., Romanitan, C., Ligor, O., Arnoult, A., Fontaine, C., Kudrawiec, R.

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Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing von Pavelescu, E.-M., Ticoş, D., Ligor, O., Romaniţan, C., Matei, A., Comănescu, F., Ţucureanu, V., Spânulescu, S.I., Ticoş, C., Ohshima, T., Nakamura, T., Imaizumi, M., Goldman, R.S., Wakahara, A., Yamane, K.

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Instability of structural defects generated by electron irradiation in GaInNAs quantum wells von Pavelescu, E.-M., Dumitrescu, M., Guina, M.

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On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayers von Pavelescu, E.-M., Kudrawiec, R., Dumitrescu, M.

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Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy von Pavelescu, E.-M., Bălţăţeanu, N., Spânulescu, S.I., Arola, E.

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Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers von Pavelescu, E.-M., Kudrawiec, R., Puustinen, J., Tukiainen, A., Guina, M.

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Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation von Pavelescu, E-M, Kudrawiec, R, B l eanu, N, Spânulescu, S, Dumitrescu, M, Guina, M

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Policy-driven monitoring and evaluation: Does it support adaptive management of socio-ecological systems? von Waylen, Kerry A., Blackstock, Kirsty L., van Hulst, Freddy J., Damian, Carmen, Horváth, Ferenc, Johnson, Richard K., Kanka, Robert, Külvik, Mart, Macleod, Christopher J.A., Meissner, Kristian, Oprina-Pavelescu, Mihaela M., Pino, Joan, Primmer, Eeva, Rîșnoveanu, Geta, Šatalová, Barbora, Silander, Jari, Špulerová, Jana, Suškevičs, Monika, Van Uytvanck, Jan

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X-ray mapping in a scanning transmission electron microscope of InGaAs quantum dots with embedded fractional monolayers of aluminium von Walther, T, Nutter, J, Reithmaier, J P, Pavelescu, E M

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Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100) von Gilfert, C., Pavelescu, E.-M., Reithmaier, J. P.

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Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs von Kudrawiec, R., Pavelescu, E.-M., Wagner, J., Sęk, G., Misiewicz, J., Dumitrescu, M., Konttinen, J., Gheorghiu, A., Pessa, M.

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Type-II band alignment of low-boron-content BGaN/GaN heterostructures von Mickevi ius, J, Andrulevicius, M, Ligor, O, Kadys, A, Tomaši nas, R, Tamulaitis, G, Pavelescu, E-M

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On the optical crystal properties of quantum-well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy von Pavelescu, E.-M., Slotte, J., Dhaka, V.D.S., Saarinen, K., Antohe, S., Cimpoca, Gh, Pessa, M.

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1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications von Pavelescu, E-M, Gilfert, C, Weinmann, P, Dănilă, M, Dinescu, A, Jacob, M, Kamp, M, Reithmaier, J-P

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Prioritization of components important for safety and sensitive to ageing. Application for TRIGA reactor von Nitoi, M., Turcu, I., Bruynooghe, C., Pavelescu, M.

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Data summarizing monitoring and evaluation for three European environmental policies in 9 cases across Europe von Waylen, Kerry A., Blackstock, Kirsty L., van Hulst, Freddy J., Damian, Carmen, Horváth, Ferenc, Johnson, Richard K., Kanka, Robert, Külvik, Mart, Macleod, Christopher J.A., Meissner, Kristian, Oprina-Pavelescu, Mihaela M., Pino, Joan, Primmer, Eeva, Rîșnoveanu, Geta, Šatalová, Barbora, Silander, Jari, Špulerová, Jana, Suškevičs, Monika, Van Uytvanck, Jan

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The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed von Kudrawiec, R., Pavelescu, E.-M., Andrzejewski, J., Misiewicz, J., Gheorghiu, A., Jouhti, T., Pessa, M.

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GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability von Pavelescu, E-M, Gilfert, C, Reithmaier, J P, Martín-Mínguez, A, Esquivias, I

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