Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys von Occena, J., Jen, T., Mitchell, J. W., Linhart, W. M., Pavelescu, E.-M., Kudrawiec, R., Wang, Y. Q., Goldman, R. S.

Volltext

Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys von Pavelescu, E.-M., Ligor, O., Occena, J., Ticoş, C., Matei, A., Gavrilă, R. L., Yamane, K., Wakahara, A., Goldman, R. S.

Volltext

Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure von Dybała, F., Kopaczek, J., Gladysiewicz, M., Pavelescu, E.-M., Romanitan, C., Ligor, O., Arnoult, A., Fontaine, C., Kudrawiec, R.

Volltext

Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing von Pavelescu, E.-M., Ticoş, D., Ligor, O., Romaniţan, C., Matei, A., Comănescu, F., Ţucureanu, V., Spânulescu, S.I., Ticoş, C., Ohshima, T., Nakamura, T., Imaizumi, M., Goldman, R.S., Wakahara, A., Yamane, K.

Volltext

Instability of structural defects generated by electron irradiation in GaInNAs quantum wells von Pavelescu, E.-M., Dumitrescu, M., Guina, M.

Volltext

On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayers von Pavelescu, E.-M., Kudrawiec, R., Dumitrescu, M.

Volltext

Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy von Pavelescu, E.-M., Bălţăţeanu, N., Spânulescu, S.I., Arola, E.

Volltext

Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers von Pavelescu, E.-M., Kudrawiec, R., Puustinen, J., Tukiainen, A., Guina, M.

Volltext

Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation von Pavelescu, E-M, Kudrawiec, R, B l eanu, N, Spânulescu, S, Dumitrescu, M, Guina, M

Volltext

X-ray mapping in a scanning transmission electron microscope of InGaAs quantum dots with embedded fractional monolayers of aluminium von Walther, T, Nutter, J, Reithmaier, J P, Pavelescu, E M

Volltext

Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100) von Gilfert, C., Pavelescu, E.-M., Reithmaier, J. P.

Volltext

Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs von Kudrawiec, R., Pavelescu, E.-M., Wagner, J., Sęk, G., Misiewicz, J., Dumitrescu, M., Konttinen, J., Gheorghiu, A., Pessa, M.

Volltext

Type-II band alignment of low-boron-content BGaN/GaN heterostructures von Mickevi ius, J, Andrulevicius, M, Ligor, O, Kadys, A, Tomaši nas, R, Tamulaitis, G, Pavelescu, E-M

Volltext

1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applications von Pavelescu, E-M, Gilfert, C, Weinmann, P, Dănilă, M, Dinescu, A, Jacob, M, Kamp, M, Reithmaier, J-P

Volltext

On the optical crystal properties of quantum-well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy von Pavelescu, E.-M., Slotte, J., Dhaka, V.D.S., Saarinen, K., Antohe, S., Cimpoca, Gh, Pessa, M.

Volltext

The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed von Kudrawiec, R., Pavelescu, E.-M., Andrzejewski, J., Misiewicz, J., Gheorghiu, A., Jouhti, T., Pessa, M.

Volltext

GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability von Pavelescu, E-M, Gilfert, C, Reithmaier, J P, Martín-Mínguez, A, Esquivias, I

Volltext

1.32-μm GaInNAs-GaAs laser with a low threshold current density von Peng, C.S., Jouhti, T., Laukkanen, P., Pavelescu, E.-M., Konttinen, J., Li, W., Pessa, M.

Volltext

Nitrogen related vacancies in GaAs based quantum well superlattices von Slotte, J., Saarinen, K., Pavelescu, E.-M., Hakkarainen, T., Pessa, M.

Volltext

Growth-temperature-dependent (self-)annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells von Pavelescu, E.-M., Jouhti, T., Dumitrescu, M., Klar, P. J., Karirinne, S., Fedorenko, Y., Pessa, M.

Volltext