Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy von Li, Xin, Sundaram, Suresh, El Gmili, Youssef, Ayari, Taha, Puybaret, Renaud, Patriarche, Gilles, Voss, Paul L, Salvestrini, Jean Paul, Ougazzaden, Abdallah

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Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: A simulation study von Tijent, Fatima Z., Faqir, Mustapha, Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah

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Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE von Li, Xin, Jordan, Matthew B., Ayari, Taha, Sundaram, Suresh, El Gmili, Youssef, Alam, Saiful, Alam, Muhbub, Patriarche, Gilles, Voss, Paul L., Paul Salvestrini, Jean, Ougazzaden, Abdallah

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Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN von Ayari, Taha, Sundaram, Suresh, Li, Xin, El Gmili, Youssef, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

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Hydrogen Confinement in Hexagonal Boron Nitride Bubbles Using UV Laser Illumination von Tijent, Fatima Z., Bouzourâa, Montassar B., Ottapilakkal, Vishnu, Perepeliuc, Andre, Gujrati, Rajat, Vuong, Phuong, Sundaram, Suresh, Faqir, Mustapha, Voss, Paul L., Salvestrini, Jean‐Paul, Ougazzaden, Abdallah

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Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications von Ayari, Taha, Bishop, Chris, Jordan, Matthew B., Sundaram, Suresh, Li, Xin, Alam, Saiful, ElGmili, Youssef, Patriarche, Gilles, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

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Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates von Karrakchou, Soufiane, Sundaram, Suresh, Ayari, Taha, Mballo, Adama, Vuong, Phuong, Srivastava, Ashutosh, Gujrati, Rajat, Ahaitouf, Ali, Patriarche, Gilles, Leichlé, Thierry, Gautier, Simon, Moudakir, Tarik, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

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Photovoltaic Concentration: Research and Development von El Himer, Sarah, El Ayane, Salima, El Yahyaoui, Sara, Salvestrini, Jean Paul, Ahaitouf, Ali

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BAlN thin layers for deep UV applications von Li, Xin, Sundaram, Suresh, Gmili, Youssef El, Moudakir, Tarik, Genty, Frédéric, Bouchoule, Sophie, Patriarche, Gilles, Dupuis, Russell D., Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah

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High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem c... von El-Huni, Walid, Migan, Anne, Djebbour, Zakaria, Salvestrini, Jean-Paul, Ougazzaden, Abdallah

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Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask von Puybaret, Renaud, Patriarche, Gilles, Jordan, Matthew B., Sundaram, Suresh, El Gmili, Youssef, Salvestrini, Jean-Paul, Voss, Paul L., de Heer, Walt A., Berger, Claire, Ougazzaden, Abdallah

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Biosensors for the Rapid Detection of Cardiovascular Biomarkers of Vital Interest: Needs, Analysis and Perspectives von Abensur Vuillaume, Laure, Frija-Masson, Justine, Hadjiat, Meriem, Riquier, Thomas, d'Ortho, Marie-Pia, Le Borgne, Pierrick, Goetz, Christophe, Voss, Paul L, Ougazzaden, Abdallah, Salvestrini, Jean-Paul, Leïchlé, Thierry

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Simulation and experimental validation in outdoor conditions of a CPV system based on both pyramid and cone secondary optical elements von Ahaitouf, Ali, El-yahyaoui, Sara, Elhimer, Sarah, El-Ayane, Salima, Salvestrini, Jean-Paul, Ougazzaden, Abdallah

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Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride von Sundaram, Suresh, Li, Xin, Halfaya, Yacine, Ayari, Taha, Patriarche, Gilles, Bishop, Christopher, Alam, Saiful, Gautier, Simon, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

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Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions von Mballo, Adama, Srivastava, Ashutosh, Sundaram, Suresh, Vuong, Phuong, Karrakchou, Soufiane, Halfaya, Yacine, Gautier, Simon, Voss, Paul L, Ahaitouf, Ali, Salvestrini, Jean Paul, Ougazzaden, Abdallah

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Analysis and control of DC drift in LiNbO3-based Mach-Zehnder modulators von Salvestrini, Jean-Paul, Guilbert, Laurent, Fontana, Marc, Abarkan, Mustapha, Gille, Stéphane

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Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi‐bulk InGaN buffer for blue to green regime emission von Alam, Saiful, Sundaram, Suresh, li, Xin, Jamroz, Miryam E., El Gmili, Youssef, Robin, Ivan C., Voss, Paul L., Salvestrini, Jean‐Paul, Ougazzaden, Abdallah

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N-Face Semi-Bulk Absorber Boosts Conversion Efficiency of InGaN Solar Cell von Belghouthi, Rabeb, Rached, Amani, Aillerie, Michel, Mohammed, Ramdani, Gujrati, Rajat, Salvestrini, Jean-Paul

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Relevant Biomarkers in Medical Practices: An Analysis of the Needs Addressed by an International Survey von Abensur Vuillaume, Laure, Leichle, Thierry, Le Borgne, Pierrick, Grajoszex, Mathieu, Goetz, Christophe, Voss, Paul L, Ougazzaden, Abdallah, Salvestrini, Jean-Paul, d'Ortho, Marie-Pia

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Investigation of p‐contact performance for indium rich InGaN based light emitting diodes and solar cells von Alam, Saiful, Sundaram, Suresh, Haas, Helge, Li, Xin, El Gmili, Youssef, Jamroz, Miryam E., Robin, Ivan C., Voss, Paul L., Salvestrini, Jean‐Paul, Ougazzaden, Abdallah

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