Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties von Papamichail, A., Persson, A. R., Richter, S., Stanishev, V., Armakavicius, N., Kühne, P., Guo, S., Persson, P. O. Å., Paskov, P. P., Rorsman, N., Darakchieva, V.

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Properties of the main Mg-related acceptors in GaN from optical and structural studies von Monemar, B., Paskov, P. P., Pozina, G., Hemmingsson, C., Bergman, J. P., Khromov, S., Izyumskaya, V. N., Avrutin, V., Li, X., Morkoç, H., Amano, H., Iwaya, M., Akasaki, I.

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Mg-doping and free-hole properties of hot-wall MOCVD GaN von Papamichail, A., Kakanakova-Georgieva, A., Sveinbjörnsson, E. Ö., Persson, A. R., Hult, B., Rorsman, N., Stanishev, V., Le, S. P., Persson, P. O. Å., Nawaz, M., Chen, J. T., Paskov, P. P., Darakchieva, V.

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N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality von Zhang, Hengfang, Paskov, Plamen P., Kordina, Olof, Chen, Jr-Tai, Darakchieva, Vanya

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Evidence for two Mg related acceptors in GaN von Monemar, B, Paskov, P P, Pozina, G, Hemmingsson, C, Bergman, J P, Kawashima, T, Amano, H, Akasaki, I, Paskova, T, Figge, S, Hommel, D, Usui, A

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Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers von Papamichail, A., Persson, A. R., Richter, S., Kühne, P., Stanishev, V., Persson, P. O. Å., Ferrand-Drake Del Castillo, R., Thorsell, M., Hjelmgren, H., Paskov, P. P., Rorsman, N., Darakchieva, V.

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Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition von Paskov, P. P., Schifano, R., Monemar, B., Paskova, T., Figge, S., Hommel, D.

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Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment von Paskov, P. P., Slomski, M., Leach, J. H., Muth, J. F., Paskova, T.

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Recombination of free and bound excitons in GaN von Monemar, B., Paskov, P. P., Bergman, J. P., Toropov, A. A., Shubina, T. V., Malinauskas, T., Usui, A.

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On the thermal conductivity anisotropy in wurtzite GaN von Tran, Dat Q., Paskova, Tania, Darakchieva, Vanya, Paskov, Plamen P.

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Anisotropic strain and phonon deformation potentials in GaN von Darakchieva, V., Paskova, T., Schubert, M., Arwin, H., Paskov, P. P., Monemar, B., Hommel, D., Heuken, M., Off, J., Scholz, F., Haskell, B. A., Fini, P. T., Speck, J. S., Nakamura, S.

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Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers von Paskova, T., Darakchieva, V., Paskov, P.P., Birch, J., Valcheva, E., Persson, P.O.A., Arnaudov, B., Tungasmitta, S., Monemar, B.

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Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere von Sundarapandian, Balasubramanian, Tran, Dat Q., Kirste, Lutz, Straňák, Patrik, Graff, Andreas, Prescher, Mario, Nair, Akash, Raghuwanshi, Mohit, Darakchieva, Vanya, Paskov, Plamen P., Ambacher, Oliver

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Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity von Eriksson, M. O., Khromov, S., Paskov, P. P., Wang, X., Yoshikawa, A., Holtz, P. O., Monemar, B., Darakchieva, V.

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Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor von Hemmingsson, C., Paskov, P.P., Pozina, G., Heuken, M., Schineller, B., Monemar, B.

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Stress and wafer bending of a -plane GaN layers on r -plane sapphire substrates von Roder, C., Einfeldt, S., Figge, S., Paskova, T., Hommel, D., Paskov, P. P., Monemar, B., Behn, U., Haskell, B. A., Fini, P. T., Nakamura, S.

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On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC von Zhang, Hengfang, Persson, Ingemar, Papamichail, Alexis, Chen, -Tai, Persson, Per O. Å., Paskov, Plamen P., Darakchieva, Vanya

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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD von Gogova, Daniela, Ghezellou, Misagh, Tran, Dat Q., Richter, Steffen, Papamichail, Alexis, Hassan, Jawad ul, Persson, Axel R., Persson, Per O. Å., Kordina, Olof, Monemar, Bo, Hilfiker, Matthew, Schubert, Mathias, Paskov, Plamen P., Darakchieva, Vanya

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Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3 von Tran, Dat Q., Blumenschein, Nicholas, Mock, Alyssa, Sukkaew, Pitsiri, Zhang, Hengfang, Muth, John F., Paskova, Tania, Paskov, Plamen P., Darakchieva, Vanya

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Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect von Armakavicius, Nerijus, Knight, Sean, Kühne, Philipp, Stanishev, Vallery, Tran, Dat Q., Richter, Steffen, Papamichail, Alexis, Stokey, Megan, Sorensen, Preston, Kilic, Ufuk, Schubert, Mathias, Paskov, Plamen P., Darakchieva, Vanya

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