A real-time investigation by RHEED of the homoepitaxial growth of GaAs on (001) oriented surfaces von Pashley, D.W., Neave, J.H., Joyce, B.A.

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Surface morphology during strain relaxation in the growth of InAs on GaAs(110) von Belk, J.G, Pashley, D.W, McConville, C.F, Joyce, B.A, Jones, T.S

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The nucleation and growth by molecular beam epitaxy of InAs on GaAs (110) misoriented substrates von Zhang, X.M., Pashley, D.W., Kamiya, I., Neave, J.H., Joyce, B.A.

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Reflection high-energy electron diffraction/transmission electron microscopy observation of growth of InAs on GaAs (110) by molecular beam epitaxy von Zhang, X., Pashley, D.W., Neave, J.H., Fawcett, P.N., Zhang, J., Joyce, B.A.

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A transmission electron microscopy (TEM) study of a wedge-shaped InAs epitaxial layer on GaAs (001) grown by molecular beam epitaxy (MBE) von Zhang, X., Pashley, D.W., Neave, J.H., Zhang, J., Joyce, B.A.

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Long-range disorder effects on the GaAs(0 0 1) β2(2 × 4) surface von Pashley, D.W., Neave, J.H., Joyce, B.A.

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Interface structure of InAs grown on GaAs(001) surfaces by molecular beam epitaxy von Fawcett, P.N., Joyce, B.A., Zhang, X., Pashley, D.W.

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A model for the appearance of chevrons on RHEED patterns from InAs quantum dots von Pashley, D.W., Neave, J.H., Joyce, B.A.

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The nucleation, growth, structure and epitaxy of thin surface films von Pashley, D.W.

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Epitaxy growth mechanisms von Pashley, D.W.

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A comparison of strain relief behaviour of In x Ga1? x As alloy on GaAs (001) and (110) substrates von Zhang, X., Pashley, D.W.

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CII. The decomposition of thin oriented silver halide layers von Pashley, D.W.

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The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy von Zhi, D., Wei, M., Dunin-Borkowski, R.E., Midgley, P.A., Pashley, D.W., Jones, T.S., Joyce, B.A., Fewster, P.F., Goodhew, P.J.

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A simple method for determining the restrictive conditions for the formation of stacking faults for the relief of pseudomorphic strain in face centered cubic epilayers von Pashley, D.W.

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The study of epitaxy in thin surface films von Pashley, D.W.

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The morphology and asymmetric strain relief behaviour of InAs films on GaAs (110) grown by molecular beam epitaxy von Zhang, X., Pashley, D.W., Hart, L., Neave, J.H., Fawcett, P.N., Joyce, B.A.

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A TEM investigation of the initial stages of InSb growth on GaAs (001) by molecular beam epitaxy von Zhang, X, Staton-Bevan, A.E, Pashley, D.W

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CVI. The sensitivity of electron diffraction as a means of detecting thin surface films: I von Newman, R.C., Pashley, D.W.

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An electron diffraction specimen chamber with a specimen vacuum lock von Kehoe, R B, Newman, R C, Pashley, D W

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An ultra-high vacuum electron microscope specimen chamber for vapour deposition studies von Valdrè, U, Robinson, E A, Pashley, D W, Stowell, M J, Law, T J

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