A model for the appearance of chevrons on RHEED patterns from InAs quantum dots von Pashley, D.W., Neave, J.H., Joyce, B.A.

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Epitaxy growth mechanisms von Pashley, D.W.

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A real-time investigation by RHEED of the homoepitaxial growth of GaAs on (001) oriented surfaces von Pashley, D.W., Neave, J.H., Joyce, B.A.

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Long-range disorder effects on the GaAs(0 0 1) β2(2 × 4) surface von Pashley, D.W., Neave, J.H., Joyce, B.A.

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Correction for Sir James Woodham Menter. 22 August 1921 — 18 July 2006 von Hirsch, Peter, Pashley, D. W.

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Sir James Woodham Menter. 22 August 1921 — 18 July 2006 von Hirsch, Peter, Pashley, D. W.

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Surface morphology during strain relaxation in the growth of InAs on GaAs(110) von Belk, J.G, Pashley, D.W, McConville, C.F, Joyce, B.A, Jones, T.S

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A simple method for determining the restrictive conditions for the formation of stacking faults for the relief of pseudomorphic strain in face centered cubic epilayers von Pashley, D.W.

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The strain relaxation of In0.1Ga0.9As on GaAs (110) grown by molecular beam epitaxy von Zhang, X., Pashley, D. W., Neave, J. H., Hart, L., Joyce, B. A.

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Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE von Parker, S D, Williams, R L, Droopad, R, Stradling, R A, Barnham, K W J, Holmes, S N, Laverty, J, Phillips, C C, Skuras, E, Thomas, R, Zhang, X, Staton-Bevan, A, Pashley, D W

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Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy von Zhi, D., Davock, H., Murray, R., Roberts, C., Jones, T. S., Pashley, D. W., Goodhew, P. J., Joyce, B. A.

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The nucleation and growth by molecular beam epitaxy of InAs on GaAs (110) misoriented substrates von Zhang, X.M., Pashley, D.W., Kamiya, I., Neave, J.H., Joyce, B.A.

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Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A von Yamaguchi, H., Belk, J. G., Zhang, X. M., Sudijono, J. L., Fahy, M. R., Jones, T. S., Pashley, D. W., Joyce, B. A.

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The relief of pseudomorphic strain in epilayers of f.c.c. structures grown in (110) orientation von Pashley, D. W.

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Reflection high-energy electron diffraction/transmission electron microscopy observation of growth of InAs on GaAs (110) by molecular beam epitaxy von Zhang, X., Pashley, D.W., Neave, J.H., Fawcett, P.N., Zhang, J., Joyce, B.A.

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The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy von ZHI, D, WEI, M, DUNIN-BORKOWSKI, R. E, MIDGLEY, P. A, PASHLEY, D. W, JONES, T. S, JOYCE, B. A, FEWSTER, P. F, GOODHEW, P. J

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Interface structure of InAs grown on GaAs(001) surfaces by molecular beam epitaxy von Fawcett, P.N., Joyce, B.A., Zhang, X., Pashley, D.W.

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The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy von Zhi, D., Wei, M., Dunin-Borkowski, R.E., Midgley, P.A., Pashley, D.W., Jones, T.S., Joyce, B.A., Fewster, P.F., Goodhew, P.J.

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Surface Science Letters: A real-time investigation by RHEED of the homoepitaxial growth of GaAs on (0 0 1) oriented surfaces von Pashley, D W, Neave, J H, Joyce, B A

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Dislocation displacement field at the surface of InAs thin films grown on GaAs(110) von Belk, J. G., Pashley, D. W., Joyce, B. A., Jones, T. S.

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