Comparison of a continuous ring layer wet granulation process with batch high shear and fluidized bed granulation processes von Järvinen, Maiju A., Paavola, Marko, Poutiainen, Sami, Itkonen, Päivi, Pasanen, Ville, Uljas, Katja, Leiviskä, Kauko, Juuti, Mikko, Ketolainen, Jarkko, Järvinen, Kristiina

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Contactless analysis of surface passivation and charge transfer at the TiO2–Si interface von Khan, Ramsha, Liu, Xiaolong, Vähänissi, Ville, Ali-Löytty, Harri, Pasanen, Hannu P, Savin, Hele, Tkachenko, Nikolai V

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Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Silicon von Liu, Xiaolong, Radfar, Behrad, Chen, Kexun, Palikko, Elmeri, Pasanen, Toni P., Vahanissi, Ville, Savin, Hele

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Efficient photon capture on germanium surfaces using industrially feasible nanostructure formation von Chen, Kexun, Isometsä, Joonas, Pasanen, Toni P, Vähänissi, Ville, Savin, Hele

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Improved emitter performance of RIE black silicon through the application of in-situ oxidation during POCl3 diffusion von Fung, Tsun Hang, Pasanen, Toni P., Zhang, Yu, Soeriyadi, Anastasia, Vähänissi, Ville, Scardera, Giuseppe, Payne, David, Savin, Hele, Abbott, Malcolm

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Comparison of SiNx‐Based Surface Passivation Between Germanium and Silicon von Liu, Hanchen, Pasanen, Toni P., Fung, Tsun Hang, Isometsä, Joonas, Leiviskä, Oskari, Vähänissi, Ville, Savin, Hele

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Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Silicon von Chen, Kexun, Pasanen, Toni P., Vahanissi, Ville, Savin, Hele

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Grass-like alumina coated window harnesses the full omnidirectional potential of black silicon photodiodes von Kauppinen, Christoffer, Pasanen, Toni P., Isakov, Kirill, Serue, Michael, Heinonen, Juha, Vahanissi, Ville, Lipsanen, Harri, Savin, Hele

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Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium von Liu, Hanchen, Pasanen, Toni P., Leiviskä, Oskari, Isometsä, Joonas, Fung, Tsun Hang, Yli-Koski, Marko, Miettinen, Mikko, Laukkanen, Pekka, Vähänissi, Ville, Savin, Hele

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Contactless analysis of surface passivation and charge transfer at the TiO 2 -Si interface von Khan, Ramsha, Liu, Xiaolong, Vähänissi, Ville, Ali-Löytty, Harri, Pasanen, Hannu P, Savin, Hele, Tkachenko, Nikolai V

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Efficient surface passivation of germanium nanostructures with 1% reflectance von Fung, Tsun Hang, Isometsä, Joonas, Lehtiö, Juha-Pekka, Pasanen, Toni P, Liu, Hanchen, Leiviskä, Oskari, Laukkanen, Pekka, Savin, Hele, Vähänissi, Ville

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Nanostructured Germanium with >99% Absorption at 300–1600 nm Wavelengths von Pasanen, Toni P., Isometsä, Joonas, Garin, Moises, Chen, Kexun, Vähänissi, Ville, Savin, Hele

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Modeling Field Effect in Black Silicon and Its Impact on Device Performance von Heinonen, Juha, Pasanen, Toni P., Vahanissi, Ville, Juntunen, Mikko A., Savin, Hele

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Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE, and Fs-Laser Etching von Liu, Xiaolong, Radfar, Behrad, Chen, Kexun, Setala, Olli E., Pasanen, Toni P., Yli-Koski, Marko, Savin, Hele, Vahanissi, Ville

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Al‐neal Degrades Al2O3 Passivation of Silicon Surface von Setälä, Olli E., Pasanen, Toni P., Ott, Jennifer, Vähänissi, Ville, Savin, Hele

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Black silicon significantly enhances phosphorus diffusion gettering von Pasanen, Toni P., Laine, Hannu S., Vähänissi, Ville, Schön, Jonas, Savin, Hele

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Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks von Pasanen, Toni, Vähänissi, Ville, Theut, Nicholas, Savin, Hele

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Tailoring Femtosecond‐Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above‐Bandgap Absorption von Liu, Xiaolong, Radfar, Behrad, Chen, Kexun, Pasanen, Toni P., Vähänissi, Ville, Savin, Hele

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Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiode von Chen, Kexun, Setala, Olli E., Liu, Xiaolong, Radfar, Behrad, Pasanen, Toni P., Serue, Michael D., Heinonen, Juha, Savin, Hele, Vahanissi, Ville

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Elimination of dead layer in silicon particle detectors via induced electric field based charge collection von Setälä, Olli E., Pasanen, Toni P., Ott, Jennifer, Krainukovs, Igors, Heinonen, Juha, Vähänissi, Ville, Savin, Hele

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