Low-Frequency Noise Investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation von Takakura, K., Putcha, V., Simoen, E., Alian, A. R., Peralagu, U., Waldron, N., Parvais, B., Collaert, N.

Volltext

Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics von Xiang, Y., Bardon, M. Garcia, Kaczer, B., Alam, Md Nur K., Ragnarsson, L.-A., Kaczmarek, K., Parvais, B., Groeseneken, G., Van Houdt, J.

Volltext

Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors von Takakura, K, Putcha, V, Simoen, E, Alian, A R, Peralagu, U, Waldron, N, Parvais, B, Collaert, N

Volltext

Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession von Chiarella, T., Witters, L., Mercha, A., Kerner, C., Rakowski, M., Ortolland, C., Ragnarsson, L.-Å., Parvais, B., De Keersgieter, A., Kubicek, S., Redolfi, A., Vrancken, C., Brus, S., Lauwers, A., Absil, P., Biesemans, S., Hoffmann, T.

Volltext

Junctionless versus inversion-mode lateral semiconductor nanowire transistors von Veloso, A, Matagne, P, Simoen, E, Kaczer, B, Eneman, G, Mertens, H, Yakimets, D, Parvais, B, Mocuta, D

Volltext

Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs von ElKashlan, R. Y., Rodriguez, R., Yadav, S., Khaled, A., Peralagu, U., Alian, A., Waldron, N., Zhao, M., Wambacq, P., Parvais, B., Collaert, N.

Volltext

3-D Sequential Stacked Planar Devices Featuring Low-Temperature Replacement Metal Gate Junctionless Top Devices With Improved Reliability von Vandooren, A., Franco, J., Parvais, B., Wu, Z., Witters, L., Walke, A., Li, W., Peng, L., Deshpande, V., Bufler, F. M., Rassoul, N., Hellings, G., Jamieson, G., Inoue, F., Verbinnen, G., Devriendt, K., Teugels, L., Heylen, N., Vecchio, E., Zheng, T., Rosseel, E., Vanherle, W., Hikavyy, A., Chan, B. T., Ritzenthaler, R., Besnard, G., Schwarzenbach, W., Gaudin, G., Radu, I., Nguyen, B.-Y., Waldron, N., De Heyn, V., Mocuta, D., Collaert, N.

Volltext

Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices von Ponton, D., Palestri, P., Esseni, D., Selmi, L., Tiebout, M., Parvais, B., Siprak, D., Knoblinger, G.

Volltext

Scalable and multibias high frequency modeling of multi-fin FETs von Crupi, G., Schreurs, D., Parvais, B., Caddemi, A., Mercha, A., Decoutere, S.

Volltext

High-Frequency Noise Performance of 60-nm Gate-Length FinFETs von Raskin, J.-P., Pailloncy, G., Lederer, D., Danneville, F., Dambrine, G., Decoutere, S., Mercha, A., Parvais, B.

Volltext

MoM simulation of signal-to-noise patterns in infinite and finite receiving antenna arrays von Craeye, C., Parvais, B., Dardenne, X.

Volltext

Impact of fin width on digital and analog performances of n-FinFETs von Subramanian, V., Mercha, A., Parvais, B., Loo, J., Gustin, C., Dehan, M., Collaert, N., Jurczak, M., Groeseneken, G., Sansen, W., Decoutere, S.

Volltext

Stochastic Matching Properties of FinFETs von Gustin, C., Mercha, A., Loo, J., Subramanian, V., Parvais, B., Dehan, M., Decoutere, S.

Volltext

Determination and Validation of New Nonlinear FinFET Model Based on Lookup Tables von Crupi, G., Schreurs, D.M.M.-P., Dongping Xiao, Caddemi, A., Parvais, B., Mercha, A., Decoutere, S.

Volltext

The Potential of FinFETs for Analog and RF Circuit Applications von Wambacq, P., Verbruggen, B., Scheir, K., Borremans, J., Dehan, M., Linten, D., De Heyn, V., Van der Plas, G., Mercha, A., Parvais, B., Gustin, C., Subramanian, V., Collaert, N., Jurczak, M., Decoutere, S.

Volltext

Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices von Magnone, P., Subramanian, V., Parvais, B., Mercha, A., Pace, C., Dehan, M., Decoutere, S., Groeseneken, G., Crupi, F., Pierro, S.

Volltext

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability von Kaczer, B., Franco, J., Weckx, P., Roussel, Ph.J., Putcha, V., Bury, E., Simicic, M., Chasin, A., Linten, D., Parvais, B., Catthoor, F., Rzepa, G., Waltl, M., Grasser, T.

Volltext

Deep Submicron CMOS for Millimeter Wave Power Applications von Ferndahl, M., Nemati, H., Parvais, B., Zirath, H., Decoutere, S.

Volltext

Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C von Agopian, P.G.D., Carmo, G.J., Martino, J.A., Simoen, E., Peralagu, U., Parvais, B., Waldron, N., Collaert, N.

Volltext

Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems von Flandre, D, Adriaensen, S, Akheyar, A, Crahay, A, Demeûs, L, Delatte, P, Dessard, V, Iniguez, B, Nève, A, Katschmarskyj, B, Loumaye, P, Laconte, J, Martinez, I, Picun, G, Rauly, E, Renaux, C, Spôte, D, Zitout, M, Dehan, M, Parvais, B, Simon, P, Vanhoenacker, D, Raskin, J.-P

Volltext