Impact of contact resistance on the transconductance and linearity of graphene transistors von Parrish, Kristen N., Akinwande, Deji

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25 GHz Embedded-Gate Graphene Transistors with High‑K Dielectrics on Extremely Flexible Plastic Sheets von Lee, Jongho, Ha, Tae-Jun, Li, Huifeng, Parrish, Kristen N, Holt, Milo, Dodabalapur, Ananth, Ruoff, Rodney S, Akinwande, Deji

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An exactly solvable model for the graphene transistor in the quantum capacitance limit von Parrish, Kristen N., Akinwande, Deji

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Multi-finger flexible graphene field effect transistors with high bendability von Lee, Jongho, Tao, Li, Parrish, Kristen N., Hao, Yufeng, Ruoff, Rodney S., Akinwande, Deji

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High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates von Jongho Lee, Tae-Jun Ha, Parrish, K. N., Chowdhury, S. F., Li Tao, Dodabalapur, A., Akinwande, D.

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Three-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency von Ramón, M. E., Parrish, K. N., Chowdhury, S. F., Magnuson, C. W., Movva, H. C. P., Ruoff, R. S., Banerjee, S. K., Akinwande, D.

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Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications von Ramón, Michael E., Movva, Hema C. P., Fahad Chowdhury, Sk, Parrish, Kristen N., Rai, Amritesh, Magnuson, Carl W., Ruoff, Rodney S., Akinwande, Deji, Banerjee, Sanjay K.

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Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers von Parrish, Kristen N., Akinwande, Deji

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Erratum: “Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers” [Appl. Phys. Lett. 99, 223512 (2011)] von Parrish, Kristen N., Akinwande, Deji

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Erratum: "Impact of contact resistance on the transconductance and linearity of graphene transistors" [Appl. Phys. Lett. 98, 183505 (2011)] von Parrish, Kristen N., Akinwande, Deji

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Impact of contact resistance on the transconductance and linearityof graphene transistors von Parrish, Kristen N., Akinwande, Deji

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Towards the Realization of Graphene Based Flexible Radio Frequency Receiver von Yogeesh, Maruthi, Parrish, Kristen, Lee, Jongho, Park, Saungeun, Tao, Li, Akinwande, Deji

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State-of-the-art flexible 2D nanoelectronics based on graphene and MoS2 von Jongho Lee, Hsiao-Yu Chang, Parrish, Kristen N., Huifeng Li, Ruoff, Rodney S., Akinwande, Deji

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Graphene frequency doubler with record 3GHz bandwidth and the maximum conversion gain prospects von Ramon, Michael E., Parrish, Kristen N., Lee, Jongho, Magnuson, Carl W., Tao, Li, Ruoff, Rodney S., Banerjee, Sanjay K., Akinwande, Deji

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On the Shoulders of Silicon Giants: How SiC is Ramping Capacity, and Where Si Fits in [Industry Pulse] von Parrish, Kristen N.

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Digital Twins: The Real Opportunities [Industry Pulse] von Butler, Stephanie Watts, Parrish, Kristen N.

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State-of-the-art graphene transistors on hexagonal boron nitride, high-k, and polymeric films for GHz flexible analog nanoelectronics von Jongho Lee, Parrish, K. N., Chowdhury, S. F., Tae-Jun Ha, Yufeng Hao, Li Tao, Dodabalapur, A., Ruoff, R. S., Akinwande, D.

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Highly bendable high-mobility graphene field effect transistors with multi-finger embedded gates on flexible substrates von Jongho Lee, Li Tao, Parrish, K. N., Yufeng Hao, Ruoff, R. S., Akinwande, D.

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Wafer-scale graphene technology and GHz nanoelectronics (invited) von Akinwande, D., Parrish, K. N., Ramon, M. E., Li Tao, Banerjee, S.

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Decades of Semiconductor Evolution is a Result of Intertwined Engineering, Business, and Geopolitics von Parrish, Kristen N.

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