A physical model for boron penetration through thin gate oxides from p/sup +/ polysilicon gates von Pfiester, J.R., Parrillo, L.C., Baker, F.K.

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Poly-gate sidewall oxidation induced submicrometer MOSFET degradation von Pfiester, J.R., Parrillo, L.C., Hayden, J.D., See, Y.-C., Fejes, P.

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The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices von Pfiester, J.R., Baker, F.K., Mele, T.C., Tseng, H.-H., Tobin, P.J., Hayden, J.D., Miller, J.W., Gunderson, C.D., Parrillo, L.C.

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A novel dual p/sup -//p/sup +/ poly gate CMOS VLSI technology von Pfiester, J.R., Parrillo, L.C.

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The effect of biased spacers on LDD MOSFET behavior von Parrillo, L.C., Pfiester, J.R., Woo, M.P., Roman, B., Ray, W., Ko, J., Gunderson, C.

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Disposable polysilicon LDD spacer technology von Parrillo, L.C., Pfiester, J.R., Lin, J.-H., Travis, E.O., Sivan, R.D., Gunderson, C.D.

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An advanced 0.5- mu m CMOS disposable TiN LDD/salicide spacer process von Pfiester, J.R., Parrillo, L.C., Woo, M., Kawasaki, H., Boeck, B., Travis, E.O., Gunderson, C.D.

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A high-performance half-micrometer generation CMOS technology for fast SRAMs von Hayden, J.D., Baker, F.K., Ernst, S.A., Jones, R.E., Klein, J., Lien, M., McNelly, T.F., Mele, T.C., Mendez, H., Nguyen, B.-Y., Parrillo, L.C., Paulson, W., Pfiester, J.R., Pintchovski, F., See, Y.-C., Sivan, R.D., Somero, B.M., Travis, E.O.

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The reduction of emitter-collector shorts in a high-speed all-implanted bipolar technology von Parrillo, L.C., Payne, R.S., Seidel, T.E., Robinson, M., Reutlinger, G.W., Post, D.E., Field, R.L.

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PROCESS FOR FORMING COMPLEMENTARY INTEGRATED CIRCUIT DEVICES von PARRILLO, L.C., REUTLINGER, G.W., WANG, L.K

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An integrated 0.5 mu m CMOS disposable TiN LDD/salicide spacer technology von Pfiester, J.R., Parrillo, L.C., Woo, M., Kawasaki, H., Boeck, B., Travis, E., Gunderson, C.

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The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs von Baker, F.K., Pfiester, J.R., Mele, T.C., Tseng, H.-H., Tobin, P.J., Hayden, J.D., Gunderson, C.D., Parrillo, L.C.

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IEDM - a view as a participant and a customer von Parillo, L.C.

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