Impact of Bias and Device Structure on Gate Junction Temperature in AlGaN/GaN-on-Si HEMTs von Schwitter, Bryan K., Parker, Anthony E., Mahon, Simon J., Fattorini, Anthony P., Heimlich, Michael C.

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Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance Thermometry von Schwitter, Bryan K., Parker, Anthony E., Fattorini, Anthony P., Mahon, Simon J., Heimlich, Michael C.

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An Edge-Coupled Marchand Balun With Partial Ground for Excellent Balance in 0.13 μm SiGe Technology von Chakraborty, Sudipta, Milner, Leigh E., Zhu, Xi, Sevimli, Oya, Parker, Anthony E., Heimlich, Michael C.

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Identifying a Double-Energy-Level Trap Center in a GaN HEMT by Performing Three-Stage Pulse Measurements von Albahrani, Sayed Ali, Parker, Anthony E., Heimlich, Michael

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120 GHz microstrip power amplifier MMICs in a commercial GaAs process von Mahon, Simon J., McCulloch, MacCrae G., Mihaljevic, Jakov, Gorman, Melissa C., Parker, Anthony E., Heimlich, Michael C.

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Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs von Sevimli, Oya, Parker, Anthony E., Fattorini, Anthony P., Mahon, Simon J.

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Common-Gate Load-Pull With Q-Band Application von Mahon, S. J., Young, A. C., Parker, A. E.

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Process-Dependence of the Even-Order Nonlinearity in Anti-Parallel Diode Pair Mixers von Gutta, V., Parker, A.E., Fattorini, A.

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LNA Design Based on an Extracted Single Gate Finger Model von Mahon, Simon J, Dadello, Anna, Vun, Peter, Tarazi, Jabra, Young, Alan C, Heimlich, Michael C, Harvey, James T, Parker, Anthony E

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Characterization of trapping and thermal dispersion in GaN HEMTs von Albahrani, Sayed A, Parker, Anthony E

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Intermodulation nulling in HEMT common source amplifiers von Parker, A.E., Guoli Qu

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Parameter Extractions for a GaAs pHEMT Thermal Model Using a TFR-Heated Test Structure von Schwitter, Bryan K., Fattorini, Anthony P., Parker, Anthony E., Mahon, Simon J., Heimlich, Michael C.

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Comments on "Ill conditioning in self-heating FET models" [and reply] von Parker, A.E., Maas, S.

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Novel technique for determining bias, temperature and frequency dependence of FET characteristics von Parker, A.E., Rathmell, J.G.

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GaAs MMIC pHEMT gate metal thermometry von Schwitter, Bryan K., Parker, Anthony E., Albahrani, Sayed A., Fattorini, Anthony P., Heimlich, Michael C.

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Measurement and characterization of HEMT dynamics von Parker, A.E., Rathmell, J.G.

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GaAs E Band Radio Chip-Set von Tarazi, Jabra, Rodriguez, Melissa C., Dadello, Anna, McCulloch, MacCrae G., Fattorini, Anthony P., Hwang, Steve, Clement, Ryan, Parker, Anthony E., Harvey, James T., Mahon, Simon J.

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Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers von Parker, A.E., Rathmell, J.G.

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Device characterization for distortion prediction including memory effects von Brinkhoff, J., Parker, A.E.

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A realistic large-signal MESFET model for SPICE von Parker, A.E., Skellern, D.J.

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